銻化鎵與銻磷砷化銦的選擇性蝕刻研究

Study on Selective Wet-chemical Etching for GaSb and InAsPSb

李劭皇(Shao-Huang Li)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2013年)

https://doi.org/10.6342/NTU.2013.01226

摘要

本論文研究使用氣態源分子束磊晶法成長一系列不同成分的銻磷砷化銦(InAsPSb)合金塊材於n型的(1 0 0)銻化鎵基板上，並研究以鹽酸溶液及氫氟酸溶液蝕刻銻化鎵及銻磷砷化銦之特性，以找出一個適用於銻化鎵及銻磷砷化銦的選擇性蝕刻配方。
對於鹽酸溶液，我們研究了氧化劑的含量對蝕刻率的影響。發現鹽酸溶液對銻化鎵蝕刻，其蝕刻率與雙氧水的含量成線性關係。此外也對於溫度與銻磷砷化銦的成分對於蝕刻率的影響進行研究。
在氫氟酸溶液方面，我們對銻磷砷化銦材料成分與蝕刻率的關係做出了探討，並在蝕刻InAs0.48P0.36Sb0.16及銻化鎵時找到了很高的蝕刻選擇比，其值為159.75。並以這個優良的選擇性蝕刻劑成功的製作了微碟結構。

關鍵字

選擇性蝕刻 ； 銻磷砷化銦 ； 銻化鎵

並列摘要

In this thesis, a series of InAsPSb with different composition was grown on (100) n-type GaSb substrate by a GSMBE system. In order to find a selective wet-chemical etchant, we study the characteristics of hydrochloric acid-based and hydrofluoric acid-based solutions etchant for InAsPSb and GaSb.
For hydrochloric acid-based solution, the influence of oxidizing agent on etch rate was studied. We found that etching rate of GaSb with hydrochloric acid-based solution is a linear function of the volume H2O2. Besides, we investigate the dependence between the etch rate, temperature and composition of InAsPSb.
For hydrofluoric acid-based solution, we also investigate the dependence between the etch rate and composition of InAsPSb. Furthermore, we found there is significant selectivity about 159.75 between GaSb and InAs0.48P0.36Sb0.16, indicating that solution will be very useful in the fabrication of devices based on InAsPSb/GaSb heterostructure. Then we successfully fabricated a microdisk structure by using the hydrofluoric acid-based solution.

並列關鍵字

selective etching ； InAsPSb ； GaSb

參考文獻

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