砷銻氮化鎵/砷化鎵塊材光學特性與結構研究

Studies on the optical and structural properties of bulk GaAsSbN epilayers on GaAs

林衍廷(Yang-Tin Lin)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00780

摘要

本論文的研究主題為低含氮化合物半導體砷銻氮化鎵(GaAsSbN)的光學與結構特性。這些與GaAs晶格匹配的樣本係以氣態源分子束磊晶法成長，其最低的室溫吸收能隙已可低達0.80 eV，具有長波長光電元件與太陽電池的應用潛力。我們在600 ~850

關鍵字

砷銻氮化鎵 ； 熱退火 ； 塊材 ； 吸收 ； 藍移

並列摘要

In this study, the optical and structural properties of dilute nitride GaAsSbN epilayers, coherently grown on GaAs substrates by gas-source molecular beam epitaxy, have been investigated. The lowest room temperature absorption edge among these GaAsSbN is 0.80 eV, indicative of the promising applications on GaAs-based long wavelength optoelectronics and tandem solar cells. Optical and structural properties of the samples before and after rapid thermal treatment were characterized by using absorption spectroscopy, Fourier transform infrared spectroscopy, photoluminescence, electron probe microanalysis and X-ray diffratometry. Blue shift in the energy gap of all the samples was not observed until the annealing temperature was higher than 750

並列關鍵字

PL ； FTIR ； absorption ； blue shift

參考文獻

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