銀銦硒薄膜太陽電池材料之製備與特性分析

Preparation and Characterization of Silver Indium Diselenide Used as the Absorber in Thin-film Solar Cells

簡思佳(Szu-Chia Chien)

指導教授 ： 呂宗昕

國立臺灣大學/工學院/化學工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.01390

摘要

本研究成功地經由溶膠凝膠法與硒化步驟製備出銀銦硒(AgInSe2)化合物。實驗中探討了不同的銀離子與銦離子比例及硒化條件下所得到的產物組成。由拉曼與Rietveld分析可知道所得到的AgInSe2為黃銅礦相純相結構。隨著硒化溫度的提高可使AgInSe2粉體變大且結晶性提升。在研究中發現，AgInSe2粉體之生長機制為二步驟反應，首先Ag與Se氣體反應生成中間產物Ag2Se，接著Ag2Se再反應生成AgInSe2。
本研究的第二部分為經由溶膠凝膠法所得的前驅物製備AgInSe2薄膜。經由控制溶膠凝膠步驟中銦離子與銀離子之比例，可成功地在400℃的低溫下硒化得到單相AgInSe2。由拉曼光譜可知所得到的AgInSe2薄膜屬於黃銅礦結構，而由紫外光近紅外光光譜可知所得到的AgInSe2薄膜具有1.23 eV之能隙。經由GIXD圖譜可推測薄膜在硒化過程中之成長機制，一開始硒蒸氣會在薄膜表面與Ag反應生成Ag2Se，接著靠著硒蒸氣之擴散至薄膜內部與In2O3及Ag2Se反應而生成AgInSe2。

關鍵字

銀銦硒 ； 薄膜太陽電池 ； 溶膠凝膠

並列摘要

AgInSe2 powders were successfully prepared via mixing the sol-gel derived precursors, followed by a selenization process. A figure depicted the relation between resultant compounds and different selenization temperatures were constructed according to the formed phases. The Raman spectrum and the Rietveld refinement confirmed that the prepared AgInSe2 belonged to the chalcopyrite structure. With increasing the selenization temperatures, the particle sizes of AgInSe2 powders as well as the crystallinity of AgInSe2 powders increased significantly. The formation mechanism of AgInSe2 during the selenization process was proposed as a two-step process. Ag2Se is formed in the first step and then induces the second-step reaction to produce AgInSe2. The sol-gel route with a selenization process is introduced as a new approach to fabricate the pure AgInSe2 powders for using in thin-film solar cells.
In the second part of this study, single-phased AgInSe2 thin films were successfully prepared via depositing the sol-gel derived precursors on the substrates, followed by a selenization process. The pure-phased AgInSe2 thin films were obtained at the selenization temperature as low as 400℃ via adding the excess amount of In3+ ions. Adjusting the In3+/Ag+ molar ratios can effectively prevent the formation of impurities Ag2Se and AgIn5Se8 in thin films. A Raman spectrum indicated that the obtained films belonged to chalcopyrite structure. The optical absorption revealed that the obtained AgInSe2 had the band gap of 1.23 eV. According to the GIXD analysis of the prepared films, the formation mechanism of AgInSe2 thin films is proposed. At first, Se vapor reacted with Ag to produce Ag2Se. Then Se vapor, In2O3 and the formed Ag2Se react with each other to form AgInSe2. The sol-gel route with a selenization process provides a potential way to obtain AgInSe2 thin films with close-packed microstructures.

並列關鍵字

AgInSe2 ； thin-film solar cell ； sol-gel

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