- 學位論文
晶圓級矽導通孔基板製作分析與應用
Manufacturing analysis and application of through silicon via (TSV) wafer
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摘要
隨著高功率LED的發展，散熱成為LED封裝的一大課題，傳統砲彈型封裝已不敷使用，取而代之的是使用陶瓷基板以SMT (surface-mount technology) 封裝，而陶瓷基板氧化鋁（Al2O3）和氮化鋁（AlN）基板分別存在熱傳導係數偏低和材料成本偏高的問題，由於再生矽晶圓 (reclaimed wafer) 具有適用晶圓級封裝和低材料成本的優勢，因此本論文提出以晶圓級矽導通孔基板 (through-silicon-via wafer；TSV wafer) 作為LED封裝基板的新選擇。 在TSV矽基板製程中，以奈秒雷射鑽孔搭配濕蝕刻製程製作TSV，並以直接鍍銅（DPC）薄膜技術完成金屬圖形。由於矽基板需以SiO2作為絕緣層，但其熱傳導係數偏低，因此以Al2O3基板、AlN基板和不同SiO2厚度之TSV矽基板分別針對散熱效能、絕緣性和破壞強度進行實驗分析與比較，並且針對TSV矽基板在高溫中的可靠度進行驗證。接著以ANSYS有限元素分析軟體，模擬在高功率LED封裝下，使用不同材料封裝基板之熱阻與結構應力。 實驗結果顯示，TSV矽基板在散熱效能和絕緣性上皆有很好的表現，惟在基板強度上較陶瓷基板差；而模擬結果顯示，使用TSV矽基板有效降低構裝熱阻、基板熱應力和緩衝LED晶粒與金屬芯基板（又稱鋁基板）（metal core printed circuit board ；MCPCB）間熱膨脹係數不匹配（CTE mismatch）問題。綜觀以上分析結果，TSV矽基板十分有潛力成為高功率LED封裝散熱基板之新選擇。
並列摘要
With the development of high power LED, heat dissipation becomes a major issue of LED package. The traditional leaded package can no longer meet the demand for effective heat dissipating, so it is replaced by the SMT (surface-mount technology) with ceramic substrate. However, ceramic substrates, Al2O3 and AlN substrate, have issues of low thermal conductivity and high material cost respectively. Due to the capability of wafer-level package and low material cost provided by reclaimed wafer, the thesis provides a new option of TSV wafer as the LED package substrate. In TSV substrate process, the innovative method with ns-laser drilling incorporating wet etching is given, and then direct plated copper (DPC) is used for pattern metallization. Si substrate requires an insulation layer of silicon dioxide (SiO2), which thermal conductivity is much lower than substrate. For this reason, the experiment is designed to analyze and compare Al2O3, AlN and Si substrate with different SiO2 thickness about thermal performance, insulation and breaking strength of substrate. Furthermore, to verify the reliability in high temperature process, high temperature test is done for TSV wafer. Then, finite element analysis software, Ansys, is applied to simulate thermal resistance and stress analysis for high power LED package with different substrates. The experimental results reveal that TSV Si substrate shows both good performance on thermal efficiency and insulation but lower failure strength comparing with the ceramic substrate. The simulation results reveal that TSV substrate effectively reduces packaging thermal resistance and thermal stress in substrate, moreover, buffering CTE mismatch between LED die and metal core printed circuit board (MCPCB). As mentioned above, TSV Si substrate has strong potential to become the new option of high power LED package substrate.
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