- 學位論文
硫化三正辛基磷表面處理銅銦硒薄膜製作之太陽能電池
Surface Passivation of CuInSe2 Thin Film Solar Cells with Trioctlyphosphine Sulfide
摘要
這篇論文的主旨為降低銅銦硒太陽能模組製造時, 由切割步驟造 成表面載子複合造成的損耗, 首先利用硫化三正辛基磷於銅銦硒薄膜 上做表面處理, 由光致激發的研究, 得知硫化三正辛基磷有助於降低 表面載子複合, 主要是因為表面的銦與硫鍵解成為三銦化二硫以及鈉 擴散的影響, 降低銅銦硒薄膜上的缺陷, 接著將硫化三正辛基磷用在 處理銅銦硒太陽能電池的切割處, 太陽能電池的開路電壓, 短路電流 以及填充率均有所改善, 故硫化三正辛基磷可以用於提升整個太陽能 模組的效率, 最後再引入硒化三正辛基磷, 碲化三正辛基磷來處理銅 銦硒薄膜太陽能電池的切割處, 但是電池的效率沒有被改善, 原因在 於溶液可能對於吸收層以外的材料造成負面影響
並列摘要
The objective of this thesis is to reduce the surface carriers recombination loss in CuInSe2 (CIS) solar module caused by scribing damage. A solution passivation method with trioctlyphosphine sulfur (TOP:S) were introduced for CIS device. From PL study, TOP:S exhibits an effective passivation for the reduction of surface carriers recombination, mainly due to indium bonded with sulfur on the surface as well as sodium diffusion on the surface to reduce carries trap. TOP:S was used to passivate the damage scribe on the CIS solar cells. It improved open circuit voltage, short current density and fill of the device. TOP:S shows excellent passivation for the damage scribe and it could be used to improve the whole module efficiency. TOP:Se and TOP:Te were also introduced to passivate the scribe on CIS solar cell. However, both show poor ability to repair the damage. Negative influence might result from the interaction between TOP:(Se or Te) and other materials of CIS solar cells.