藉由複合型圖案化藍寶石基板以成長低缺陷密度之氮化鎵

Low Defect density of GaN fabricated by compound pattern sapphire substrate

劉修安(Hsiu-An Liu)

指導教授 ： 管傑雄

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2016年)

https://doi.org/10.6342/NTU201603133

摘要

在氮化鎵薄膜磊晶中使用圖案化藍寶石基板(Patterned Sapphire Substrates, PSSs)可以減少穿隧差排密度(Threading Dislocation Density)以增加磊晶品質，以及降低缺陷密度(defect density)。和業界量產型圖案化藍寶石基板單一週期不同，我們製作的基板上微結構同時擁有兩種不同週期，但是我們發現隨著改變微結構不同的頂部c-plane大小和不同週期微結構之間的差異，成長於其上的氮化鎵晶體將呈現兩種截然不同的樣貌，並且受到不同的應力，且此應力會影響到後續製成電子元件之使用效率。
在最後的階段，論文會探討比較複合型圖案化藍寶石基板與量產型商業化藍寶石基板(Conventional PSSs, CPSSs)之應力與缺陷密度，利用複合型圖案化藍寶石基板之氮化鎵薄膜所受到的應力約只有量產型商業化藍寶石基板的一半，表示使用不同週期與結構的搭配，可以釋放氮化鎵薄膜上之應力與降低缺陷密度，進而提高電子元件之使用效率。

關鍵字

氮化鎵 ； 複合型圖案化藍寶石基板 ； 濕式蝕刻 ； 電子束微影

並列摘要

Using a patterned sapphire substrate (PSSs) in the epitaxial gallium nitride thin film can reduce the threading dislocation density and increase the crystal quality, and reduce the defect density (defect density). Commercial patterned sapphire substrate has single period microstructure; however , we have two different period microstructure on the sapphire substrate, but we found that with the change between the different microstructures of the top c-plane size and microstructure of different cycles difference, gallium nitride crystal growth will present two very different faces, and are subject to different stress, which can affect the efficiency of the use made of the subsequent electronic components.
In the final stage, this paper will discuss the stress and defect density between compound patterned sapphire substrates and commercial patterned sapphire substrate (CPSSs). Compound patterned sapphire substrate suffered only about half the amount of stress with commercial patterned sapphire substrate. Using appropriate periodic microstructures, stress and defect density will decrease; thus improving efficiency of electronic devices which was grown on the gallium nitride thin film.

並列關鍵字

GaN ； Patterned Sapphire Substrate ； Multiple Patterned Sapphire Substrate ； Wet-Etching ； Electron-Beam Lithography

參考文獻

[1] S. J. Pearton, GaN and Related MaterialⅡ, CRC Press, 1997.

[2] H. Morkoç, Nitride Semiconductors and Devices, Springer, 1999.

Conference Paper

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