- 學位論文
加入六角形氮化硼之五氧化二鉭電阻式記憶體特性研究
Investigation of Ta2O5-Based Resistive Random Access Memory with multilayer h-BN
摘要
現有記憶體科技將難以滿足未來對於高效能記憶體的需求，在多種發展中的次世代記憶體中，電阻式記憶體擁有達成未來需求的潛力。其作為一種電阻式記憶體，在各式不同的選用材料中，我們利用Ta2O5作為記憶體的介電層，並且利用改變製程參數及上電極材料去探討元件特性。此外為了進一步改善功耗問題，我們利用加入一層h-BN去減少漏電流路徑，並在新的記憶體結構Ta/h-BN/Ta2O5/Pt去做電性的探討。在新的結構中，由於寫入電壓及操作電流下降，因此使整體功耗下降了98%、除此之外元件操作的耐久性更提升了100%以上。此論文研究在Ta2O5電阻式記憶體中加入h-BN的電性變化，以及發現此結構可繼續發展的潛力。
並列摘要
Resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, tantalum oxide is selected as the switching memory layer, and we investigate the memory switching characteristics by controlling the fabrication processes condition and changing the top electrode material. As the following, to improve the device performance in power consumption, h-BN layer is applied to reduce the leakage current path and improve the operation power during the switching operation. And the I-V characteristics and the memory switching model of the device structure (Ta/h-BN/Ta2O5/Pt) are reveled. Under the device structure with h-BN, the write voltage and the operation current are significant decrease and the power consumption is reduced almost 98%. Furthermore, the endurance is increased almost 100%. In this thesis, the electrical characteristics of the Ta2O5 based RRAM with h-BN is studied, and revealing that it has the promising memory characteristics and the potential for the further researches.