利用金屬光柵在CMOS標準製程中實現之高效率光檢測器

Implementation of High-Efficiency Photodetectors with Metal Grating Structures Using Standard CMOS Process

張皓博(Hao-Po Chang)

指導教授 ： 陳昭宏

國立臺灣大學/工學院/工程科學及海洋工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.01852

摘要

本論文利用0.18 μm CMOS標準製程來實現一種改善光檢測器效率的新方式。藉由標準製程中的金屬層來設計一種稱為光柵(optical grating)的光學結構，透過此結構便能讓入射光源產生繞射現象，故光源傳播至光檢測器的路徑改變，使其能較為平均地分佈並照射入光檢測器的矽基底當中，藉此提升光檢測器的光吸收效力，改變以往文獻中”藉由改善載流子收集速度或是利用後設電路強化”之方式來提升效率。
研究的主要內容為深入談論光柵結構的設計概念及結構模擬，並分別設計出兩種光柵之結構，其吸收效能皆比無光柵結構的光檢測器提升至2.5倍~3.6倍；同時配合光檢測器的電性模擬結果，實際地下線製作實體，討論製程結構佈局上的可行性，並設計出對照組及實驗組的共四個光檢測器以待量測。

關鍵字

CMOS標準製程；光檢測器；光柵

並列摘要

This work demonstrates a new way to improve the effectiveness of photodetectors fabricated by standard silicon process technologies. With the metal layers of the standard process,we design an optical structure called optical grating. When incident light pass through this structure,the diffraction happens. Then, the optical path to the photodetector will be changed. Incident light may be uniform distribution on the photodetectors and then propagates into the deep silicon substrate. Finally, the optical absorption characteristics of photodetectors can be improved. It’s a different method from old works which improve photodetectors by changing the way of collecting carriers or the circuit of it.

The main content is the design of the optical grating and the optical simulation of structure. We have two kinds of optical gratings and the performance of light absorption of the photodetectors with optical grating are higher than the photodetectors without optical grating about 2.5~3.6 time. Then,We combine those results with the electrical simulation of photodetector and analyze the feasibility models of structure in Standard CMOS Process. Finally, we have four photodetectors which divide into control group and experimental group. Next, we will measure them and discuss.

並列關鍵字

Standard CMOS Process；Photodetectors；Optical Grating

參考文獻

[3]M. Jutzi, M. Grozing, E. Gaugler, W. Mazioschek, and M. Berroth, “2-Gb/s CMOS Optical Integrated Receiver With a Spatially Modulated Photodetector,” IEEE Photonics Technology Letters, vol. 17, no. 6, pp. 1268–1270, June 2005.

[4]Cathleen Rooman, Daniel Coppee, and Maarten Kuijk, “Asynchronous 250 Mbit/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications,” in Proceedings of the 25th European Solid-State Circuits Conference, 1999, pp. 234–237.

[5]Tony Shuo-Chun Kao, and Anthony Chan Carusone, “A 5-Gbps opto-electrical receiver with on-chip photodetector in 0.18-μm CMOS,” in Microsystems and Nanoelectronics Research Conference, 2009, pp. 17–20.

[6]Hyo-Soon Kang, Myung-Jae Lee, and Woo-Young Choi, “Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process,” Applied Physics Letters, vol. 90, no. 15, pp. 151118-151118-3, Apr. 2007.

[7]Jin-Sung Youn, Hyo-Soon Kang, Myung-Jae Lee, Kang-Yeob Park, and Woo-Young Choi, “High-Speed CMOS Integrated Optical Receiver With an Avalanche Photodetector,” IEEE Photonics Technology Letters, vol. 21 , no. 20, pp. 1553–1555, Oct. 2009.