利用圖形修復並藉由放寬之製像真確度條件以達到直寫微影之產能改善

Improvement in Direct-Write Lithography Throughput by Exploiting Relaxed Patterning Fidelity Requirements with Pattern Rectification

余浩澐(Hao-Yun Yu)

指導教授 ： 蔡坤諭

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.10799

摘要

無資料

關鍵字

邊緣粗糙度 ； 臨界尺寸 ； 電子束微影 ； 直寫 ； 分子自組裝 ； 產能 ； 製像真確度

並列摘要

Line edge roughness (LER) influencing the electrical performance of circuit components is a key challenge for electron-beam lithography (EBL) due to the continuous scaling of technology feature sizes. Controlling LER within an acceptable tolerance that satisfies International Technology Roadmap for Semiconductors requirements while achieving high throughput become a challenging issue. Although lower dosage and more-sensitive resist can be used to improve throughput, they would result in serious LER-related problems because of increasing relative fluctuation in the incident positions of electrons. Directed self-assembly (DSA) is a promising technique to relax LER-related pattern fidelity (PF) requirements because of its self-healing ability, which may benefit throughput. To quantify the potential of throughput improvement in EBL by introducing DSA for post healing, rigorous numerical methods are proposed to simultaneously maximize throughput by adjusting writing parameters of EBL systems subject to relaxed LER-related PF requirements. A fast, continuous model for parameter sweeping and a hybrid model for more accurate patterning prediction are employed for the patterning simulation. The tradeoff between throughput and DSA self-healing ability is investigated. Preliminary results indicate that significant throughput improvements are achievable at certain process conditions.

並列關鍵字

line edge roughness ； critical dimension ； electron-beam lithography ； direct-write ； direct self-assembly ； throughput ； patterning fidelity

參考文獻

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