K頻帶印刷電路板到低溫共燒陶瓷錫球網格陣列轉接補償 及V頻帶低溫共燒陶瓷到低溫共燒陶瓷覆晶轉接設計

K band PCB-to-LTCC BGA transition compensation and V band LTCC-to-LTCC flip-chip transition design

林佳賢(Chia-Hsien Lin)

指導教授 ： 盧信嘉

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.01906

摘要

此論文總共分成兩部分：第一部分為錫球網格陣列補償設計，主要為印刷電路板與低溫共燒陶瓷間利用錫球陣列加熱，凝固後將兩板連接，兩板均以微帶線連接錫球，在錫球兩端微帶線設計補償電路，能在傳輸端及接收端達到 及 -20dB或更好的結果頻率為19GHz +/- 1GHz及29GHz +/- 1GHz。第二部分為覆晶轉接配合多層介質內層轉接的設計，此部分為利用準同軸線結構當內層轉接，同時在覆晶轉接也以準同軸線架構黏接，改變傳統的GSG黏接，其利用在40GHz到70GHz的頻帶中，本論文期望能在如此寬頻中達到 及 -10dB或更好，成為能達成各頻帶皆能使用的轉接設計。

關鍵字

覆晶技術 ； 多層介質轉接 ； 準同軸線架構 ； 垂直轉接 ； 錫球網格陣列

並列摘要

This thesis is divided into two parts: firstly, it is about BGA (ball grid array) transition compensation design with hi-low impedance. The connections between PCB and LTCC (low temperature co-fired ceramic) substrate are made by reflow of solder balls. Microstrip line is used in this transition. and can be better than -20dB at 19GHz +/- 1GHz and 29GHz +/- 1GHz. Secondly, we will design the flip-chip transition in multi-layer substrate using quasi-coaxial line as a vertical inner transition. New quasi-coaxial type bumps replace traditional GSG flip-chip bumps are used in the range from 40GHz to 70GHz. It could reach better than 10dB in return loss and be a broadband flip-chip transition.

並列關鍵字

flip-chi ； multi-layer substrate ； quasi-coaxial structure ； vertical transition ； ball grid array(BGA)

參考文獻

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