電子鄰近效應之模型識別與修正演算法設計

Design of Model-based Identification and Correction Algorithms for Electron Proximity Effects

田沛霖(Pei-Lin Tien)

指導教授 ： 蔡坤論

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.01236

摘要

隨著半導體工業的迅速發展，積體電路之線寬隨著摩爾定律縮小到次波長等級，光學微影遇到了物理上的極限，而電子束微影是極具次世代微影主力的一種微影技術。而限制電子束微影解析度的因素中，由電子前向散射和背向散射所造成的鄰近效應是影響非當大的一項。我們提出應用系統識別理論找出鄰近效應分佈的方法，並利用線性與非線性混合的曲線擬合方法找出鄰近效應參數。並進一步提出經由調整圖形達到電子鄰近效應修正的演算法。在模擬數種４５奈米和２２奈米的設計電路圖中均能使所得到的曝光圖形和設計的佈局圖形誤差大幅下降。

關鍵字

電子束微影 ； 鄰近效應 ； 前向散射 ； 背向散射 ； 系統識別

並列摘要

The rapid progress in microlithography technologies behind Moore’s law has been kept for half a century. Electron-beam lithography is a very potential technique, and could become the main force of manufacture in the future. But it is still have some defects like proximity effect. In this project, we first introduced the background of lithography, and further more introduced the electron-beam lithography. The electron-beam lithography is limited in electron scattering. We first use the convolution form of system identification technique to find the energy distribution. Furthermore, we also propose a model-based electron proximity effect correction by shape modification. We use different test pattern in electron proximity effect correction and make the error between desired pattern and wafer pattern is much smaller.

並列關鍵字

Electron-beam lithography ； Proximity effect ； Forward scattering ； Backward scattering ； System identification

參考文獻

2. ITRS lithography roadmap 2005 at http://public.itrs.net/

3. N. Saitou, Monte Carlo simulation for the energy dissipation profiles of 5-20

4. T. H. P. Chang, Proximity effect in electron-beam lithography, J.

Beam Lithography Using Doubhnut-Structures”, Microeletronic Engineering,

Proximity Correction in Electron Beam Lithography on a Sub-100 nm Scale”,