多層結構寬頻垂直轉接

Broadband Vertical Transitions in Multi-Layler Structure

黃韋欽(Wei-Ching Huang)

指導教授 ： 黃天偉

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.01334

摘要

無線與微波通訊發展至今，皆要求其產品的發展講求輕薄短小，故使用多層結構來滿足電路設計的需求。然而在多層結構中，傳輸線在層與層之間的垂直轉接過程產生其電容或電感效應，故在許多論文中，常常會去探討如何補償其電容或電感效應，以其達到上下層阻抗匹配，在垂直轉接的過程中產生最小的訊號損失。
本論文中的ML-ML垂直轉接，首先採用空腔耦合的方式來完成，另一種則採用類似於本地匹配方式來改善其補償。所得到的效果可從DC開始至所要求的頻帶，而達到寬頻的效果，在LTCC的多層結構中，可達到至60GHz，在FR4板材中，可達到10GHz.時 S11之值皆在-20dB以下。

關鍵字

微帶線 ； 垂直轉接 ； 開槽 ； 空腔 ； 多層結構

並列摘要

With the demand of miniature size of microwave components for low cost products needed by nowadays microwave communication systems. Therefore, multi-layer technology is the main key to fulfill the requirements. However, the parasitic capacitance and inductance of transmission line will occur at vertical transition between layer and layer, and there are many compensated techniques had been come up in many thesis to minimize the signal degradation.

The vertical transitions between Microstrip line - Microstrip line are realized by cavity coupling and local matching techniques in this thesis. By using the local matching technique, a wideband performance can be achieved from DC to 60 GHz and DC to 10 GHz in LTCC technology and FR4 substrate, respectively.

並列關鍵字

mictrostrip line ； vertical transitions ； slot ； cavity ； multi-layer

參考文獻

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