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  • 學位論文

直流轉直流與直流轉交流式電荷泵

Charge Pump for DC/DC and DC/AC Conversion

指導教授 : 陳秋麟

摘要


電荷泵又稱交換電容式電壓轉換器,由於可以將較低電壓的直流電源昇至較高電壓的直流輸出,故被應用於記憶體元件如動態存取記憶體(DRAM)、快閃電清除可程式唯讀記憶體(FLASH EEPROMs)上;而且可以同時提供不同位準的電壓輸出,因此也應用在現今複雜度增加的顯示卡上。   本論文的主題為直流轉交流型與直流轉直流型電荷泵。主要是提出以推挽式(push-pull type)為架構的電荷泵電壓轉換器,除了可以如傳統電路般產生倍數於輸入電源的直流電壓訊號輸出外,只需要採用不同的輸出級電路,便可利用推挽式架構的特性產生倍數於輸入電源的交流電壓訊號輸出。 除了可以產生交流電壓的訊號輸出外,推挽式架構也可以使直流電壓的訊號輸出較為穩定。此外,電路的高壓端開關是採用交叉耦合式(cross-coupled)的驅動方式,使其不需要像傳統的電荷泵電壓轉換器再額外提供驅動控制訊號給開關使用,可以大幅降低電路設計的難度。 此電路在分析與設計階段,我們使用HSPICE套裝軟體,藉此幫助我們模擬此電路的結果,以利電路設計上的修改。最後再將實際作出的電路與模擬時的電路在其結果上作比較,以驗證此電路於實際應用的正確性,證實其確實可以產生不同於一般電路的交流電輸出電壓。

關鍵字

電荷泵

並列摘要


Charge pump, also called switched-capacitor voltage converter, can pump the lower direct-current voltage source to the higher dc output voltage. It is widely used in some memory components like DRAM and FLASH EEPROMs. And it can provide output voltages of different levels at the same time, so it also be used in the graphic card that is more complex than before.   In this thesis, a charge pump voltage converter with push-pull type structure is proposed. In addition to the conventional dc voltage, this charge pump with different kinds of output stage can also generate an ac output voltage that is multiple times of the supply voltage.   The push-pull structure can also stabilize the dc output voltage signal in addition to the generating of the ac output voltage signal. Besides, the high-side switches of the circuit are driven by the use of cross-coupled method. There is no need to provide an extra driving signal for the high-side switches like the conventional charge pumps. Difficulty of design can be greatly reduced.   During design and analysis stages, the HSPICE is used for the simulation and modification of the circuit. Finally we compared the discrete circuit experiments with the simulation results, and verified the correctness of the circuit application. And we proved that it can be used to generate an ac output voltage that is different from the conventional circuits.

並列關鍵字

Charge Pump

參考文獻


[1] 陳永芳, “2000年諾貝爾物理獎簡介 - 半導體異質結構與積體電路”, 台灣大學物理系, 物理雙月刊, 廿二卷六期, p. 533-538, 2000年12月.
[2] J. D. Cockcroft and E. T. Walton, “Production of high velocity positive ions,” Proc. Roy. Soc. A, vol. 136, pp. 619-630, 1932.
[3] J. Dickson, “On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique,” IEEE J. Solid-State Circuits, vol. 11, no. 6, pp. 374-378, Jun. 1976.
[4] J. Wu and K. Chang, “MOS charge pumps for low-voltage operation,” IEEE Journal Solid-State Circuits, vol. 33, no. 4, pp. 592-597, Apr. 1998.
[9] M. S. Makowski, “Realizability conditions and bounds on synthesis of switched-capacitor dc/dc voltage multiplier circuits,” IEEE Trans., Circuits and Systems, vol.44, pp. 684-691, Aug. 1997.

被引用紀錄


陳中傑(2006)。調壓型電荷幫浦〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.01123

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