低溫多晶矽薄膜電晶體元件電容特性之分析

Analysis of Capacitance Behavior in Polysilicon thin film transistor Devices simulation

林嵩鈞(Song-Jun Lin)

指導教授 ： 郭正邦

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.01567

摘要

本論文中提出了低溫多晶矽薄膜電晶體的電流突增效應(Kink Effect)之DC直流與AC交流分析。
第一章對於顯示器技術將來以及現在之趨勢，簡單介紹低溫多晶矽薄膜電晶體元件結構以及電流突增效應。
第二章提出一個可供電路模擬之用，以物理基準的低溫多晶矽薄膜電晶體電流分析模型。且利用製程元件模擬軟體為Tsuprem4，以及二維元件模擬軟體MEDICI來分析元件參數對DC直流的Kink Effect之影響。
第三章提出一個可供電路模擬之用，以物理基準的低溫多晶矽薄膜電晶體電容分析模型。同時分析元件參數對AC交流的Kink Effect之影響，討論電容變化與該效應之間的關連性。

關鍵字

低溫多晶矽薄膜電晶體

並列摘要

Abstract
Have proposed exchanging analysing in effect (Kink Effect ) DC direct current and AC that the electric current of the electric crystal of the low-temperature polycrystalline silicon membrane uprushes in this thesis.
And present trend chapter one in the future to the technology of the display, the effect that introduce the electric crystal component structure and electric current of low-temperature polycrystalline silicon membrane and uprush briefly.
Propose one can supply power way simulation spend , analyse models with physics basic low-temperature polycrystalline silicon membrane electric crystal electric current. Is it make Cheng component simulation software Tsuprem4 , and two-dimentional component simulation software MEDICI is it analyse component parameter to influence of Kink Effect , DC of direct current to come to utilize.
Propose one can supply power way simulation spend, analyse models with the electric electric capacity of crystal of low-temperature polycrystalline silicon membrane with basic physics. Analysing the influence of Kink Effect that the parameter of the component is exchanged to AC at the same time, the ones that discusses the connecting with between electric capacity change and this effect are closed.

並列關鍵字

Polysilicon thin film transistor Devices

參考文獻

[1.1] John R. F. McMacken, Member, IEEE, and Savvas G. Chamberlain, Fellow, IEEE, “A Numerical Model for Two-Dimensional Transient Simulation of Amorphous Silicon Thin-Film Transistors” IEEE Transactions on computer-aided design, Vol. 11, No. 5, pp.629-639, May 1992

[1.2] J. S. Huang and C. H. Wu, “Two-Dimensional Calculation of Transient Terminal Currents in Amorphous Silicon Thin-Film Transistors” Department of Electrical Engineering, University of Missouri-Rolla, Rolla, pp.21-24, MO 65401.

[1.3] John Y. W. Seto, “The electrical properties of polycrystalline silicon films” Journal of Applied Physics, Vol. 46, No. 12, pp.5247-5257, December 1975.

[1.4] Anish Kumar K. P. and Johnny K. O. Sin, “A Simple Polysilicon TFT Technology for Display Systems on Glass” IEDM, pp.515-518, 97.

[1.5] Chien Kuo Yang, Tqan Fu Lei, and Chung Len Lee, Senior Member, IEEE, “Characteristics of Top-Gate Thin-Film Transistors Fabricated on Nitrogen-Implanted Polysilicon Films” IEEE Transactions on electron devices, Vol. 42, No. 12, pp.2163-2169, December 1995.