- 學位論文
高敏感度光偵測器之製程與研究
Highly Sensitive Photodetector Based on n-ZnO/p-Si-nanotips Heterostructure
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摘要
本文中我們首次設計研製與探測氧化鋅(ZnO)和矽奈米尖錐(Si-nanotip)異質接面的高效率光偵測二極體，首先將鍍有銀奈米顆粒當蝕刻光罩的P型矽晶圓放入反應式離子蝕刻機(reactive ion etching,RIE)中進行蝕刻，然後製備出P型矽奈米尖錐結構(p-Si-nanotips)，接著利用電子束蒸鍍系統(e-beam evaporator)，在P型矽奈米尖錐上沉積一層N型的氧化鋅薄膜。由我們的研究發現，氧化鋅和矽奈米尖錐異質接面的光二極體與平面的矽(Si)和氧化鋅異質接面光二極體一相比較下，氧化鋅和矽奈米尖錐異質接面的光偵測二極體有著更好的光敏感度跟光響應度。 利用氧化鋅和矽奈米尖錐異質接面來增強光敏感度和光響應度的主要機制是我們利用矽奈米尖錐結構來減少其反射率進而增加其吸收率，且一維的奈米尖錐結構的表面積比平面結構的表面積還多，所以氧化鋅和矽奈米尖錐的接觸面積會遠比氧化鋅和矽平板基板的接觸面積大很多。基於以上二個原因，所以我們增強了氧化鋅和矽光偵測二極體的敏感度和響應度。
並列摘要
ZnO/Si-nanotips heterostructure is introduced as a new and efficient photodiode for the first time. P-type Si-nanotips were fabricated by reactive ion etching (RIE) with the etching mask using Ag nanoparticles, and n-type was deposited by e-beam evaporation. It is found that n-ZnO/p-Si-nanotips diode possesses a highly sensitive photoresponse when comparing with its n-ZnO/p-Si-planar counterpart. The underlying mechanism can be attributed to the enhanced absorption due to light trapping by Si nanotips array as well as the enhanced area of p-n junction due to the inherent nature of one-dimensional nanostructures.
參考文獻
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