在本文中,我們在銅箔上進行了鹵化亞銅/氧化銅納米粒子(CuX@CunO NPs)的原位電化學沉積,來降低銅和氧化銅之間的電子轉移電阻。被沉積的鹵化亞銅CuX (X = Cl、Br 或 I)轉化為CuO過程中導致在CuO晶格中產生豐富的氧空位,提高催化活性位點和電荷轉移效率。在製備的CuX@CunO NPs電極中,CuBr@CuO NPs對葡萄糖的氧化表現出優異的電催化活性,與未修飾的銅電極(0.40 V)相比,其氧化電位為0.25 V(vs. SCE)。在印刷電路板 (PCB) 上製造 CuX@CunO NPs 電極偵測葡萄糖電氧化電流,所製造的傳感器在鹼性環境下中對葡萄糖偵測具有良好的線性範圍,從5.0 µM到10.88 mM (R2 = 0.995)。傳感器也通過在餐後不同時間間隔檢測唾液樣品中的葡萄糖濃度來驗證其可靠性,結果與商業血糖儀確定的血糖水平高度相關(R2 = 0.743)。因此我們的CuBr@CuO NPs電極在監測唾液葡萄糖方面具有巨大潛力,能夠實現未來對糖尿病患者進行無創血糖監測的目的。
In this work, we conduct in situ electrochemical deposition of cuprous halide/copper oxide nanoparticles (CuX@CunO NPs) on copper foil to reduce the electron transfer resistance between copper and copper oxide. The deposited CuX (X = Cl, Br or I) converts to CunO lead to the generation of abundant oxygen vacancies in the CuO lattice, enhancing the catalytically active sites and charge transfer efficiency. Among the as-prepared CuX@CunO NPs electrode, CuBr@CuO NPs showed excellent electrocatalytic activity toward the oxidation of glucose with a relatively low potential of 0.25 V (vs. SCE) compared to the unmodified copper electrode (0.40 V). The high sensitivity of CuBr@CuO can remain at 4522 uA cm-2 mM-1 in a very large linear range from 5 μM to 10.88 mM when compared to those CuO nanostructure-based materials. The current responses of the electrooxidation allow for the detection of glucose by fabricating of CuX@CunO NPs electrode on a printed circuit board (PCB). The fabricated sensor showed a good linear range from 5.0 µM to 10.88 mM (R2 = 0.995) for glucose sensing in an alkaline medium. Its reliability was validated by detecting the glucose concentration in saliva samples at different time intervals after the meal. The results are well correlating with the blood glucose level determined by a commercial blood glucose meter (R2 = 0.743). Our CuBr@CuO CuX@CunO NPs electrode possesses great potential in monitoring salivary glucose to achieve the purpose of non-invasive glucose monitoring for patients with diabetes in the future.