摘要
本篇研究的中心即在於製作一橫向場發射結構。經由使用電子束微影曝光系統（Electron Beam Litography System）、反應氣體離子乾式蝕刻系統（Reactive Ion Etching）以及真空熱蒸鍍系統，我以四種不同設計圖形完成了一系列具有立體缺口的結構，並從中選擇適合作為場發射結構的結果進行量測。而量測出來的電流-電壓特性經過Fowler-Norheim理論的驗證，證實我所製作的結構具備有場發射的電流特性。而同時我們發現製作完成的結構具有低起始電壓的特性，量測所得的起始電壓幾乎都在1伏特左右。而這項特性對於未來製作元件甚至電路方面，都會有很重要的幫助。
並列摘要
In this thesis, we use e-beam lithography system and reactive ion etching to fabricate a simple lateral field emission structure. Our design needs only one lithography process to define the cathode, anode and trench region. Then we use reactive ion etching to etch the trench region on the substrate. After this process, the cathode and anode region is separated by trench etching process. Then we use PVD to deposit a thin aluminum film to form the final structure. We have done some measurements to verify the characteristics of our structure. With a set of low leakage current probe station system, we can easily detect the changing of emission current in orders. When using Folwer-Nordheim equation to make a plot, we can have a plot with partial linear region. Which means the current in this region is generated by field emission. Also, we discover our structure has low turn-on voltage down to 1V. With different cathode-anode distance, the emission characteristic and turn-on voltage are different for sure. Nonetheless, the turn-on voltages of our structures are below 2V, unless it has breakdown before. This low turn-on voltage characteristic is very useful for further application.
參考文獻
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