以光學方法評估氮化銦鎵/氮化鎵量子井之品質

Evaluating the Quality of InGaN/GaN Quantum Wells with Optical Measurements

李俊賢(Chun-Hsien Lee)

指導教授 ： 楊志忠

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.10601

摘要

在本研究中，首先，我們以Ti:sapphire Laser 之二倍頻 (波長390nm)進行了temperature dependent photoluminescence (PL)、power dependent PL、temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL的量測，觀察不同樣品之量子井的特性並比較。
接著，我們以He-Cd Laser (波長325nm) 進行了temperature dependent photoluminescence (PL)、power dependent PL的實驗，比較其結果與以Ti:sapphire Laser 之二倍頻之量測的不同。最後 我們以JSM-6701F的 Scanning Electron Microscope (SEM) 做了cathodoluminescence (CL) 量測，以及以Ti:sapphire Laser 之二倍頻 (波長390nm) 進行了temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL之量測。

關鍵字

氮化銦鎵/氮化鎵量子井

並列摘要

In this study, we first of all, demonstrated the results of temperature dependent photoluminescence (PL)’power dependent PL’temperature dependent time-resolved photoluminescence (TRPL) and power dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm). Observing the characteristics of quantum wells of of different samples.
Second, we demonstrated the results of temperature dependent photoluminescence (PL) and power dependent PL with a He-Cd Laser (λ=325nm), and compared these results with which we did with the Ti: sapphire Laser. Finally, we did the cathodoluminescence (CL) measurement with the Scanning Electron Microscope JSM-6701F (SEM) , and the experiments of temperature dependent photoluminescence time-resolved (TRPL) and power measurement of dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm).

並列關鍵字

InGaN/GaN Quantum Wells

參考文獻

S. Nakamura and G. Fasol, The Blue Laser Diode (springer,Berlin,1997)

U. Yuji and T. Tsunemasa, “Lighting theory and luminous characteristics of white light-emitting diodes,”Opt. Eng. 44, 124003 (2005)

I. H. Ho and G. B. Stringfellow, “Solid phase immisciblity in GaInN,” Appl. Phys. Lett. 69,2701 (1996)

M. K. Behbehani, E. L. Piner, S. X. Liu, N. A. El-Masry, and S. M. Bedair, “Phase separation and ordering coexisting in InGaN grown by metal organic chemical vapor deposition,” Appl. Phys. Lett. 75, 2202 (1998)

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,”Appl. Phys. Lett. 72, 1730 (1999)