金屬矽化物與奈米材料在光電元件上應用之研究

Study of Metal Silicide amd Nanomaterials for Optoelectronic Device Applications

許宗翰(Tsung-Han Hsu)

指導教授 ： 陳學禮

國立臺灣大學/工學院/材料科學與工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.01772

摘要

金屬矽化物及光子晶體皆是光電元件中具有關鍵性的材料，本論文主要目的即為對此兩種材料之研究。首先是金屬矽化物之光學特性，由於矽化鈦即將作為下一代光偵測元件閘極之材料，我們利用矽化鈦的橢圓參數經由公式轉換，得到矽化鈦在可見光波段之折射率及消光係數，同時也針對下一世代最小線寬曝光所需要之深紫外光及真空紫外光波段，以不同入射角量測其反射率，來得到矽化鈦在193nm（ArF雷射）及157nm（F2雷射）的光學常數；之後，在利用這些光學常數，設計並製作矽化鈦在可見光波段之抗反射層，增進其作為可見光之光偵測元件時的光電效應，同樣也針對193nm及157nm製作底部抗反射層，減少在曝光時的駐波效應。
另一項在光電元件重要的主題是光子晶體，其光子能階特性對於將來光電元件的應用具有極大的潛力，因此我們藉由一簡單易實行的方法，使光子晶體能階能夠微調1∼2nm，並且對此方法在不同粒徑比所可能面臨之極限以及晶體之排列情況做預測之模型並且分析其排列情形，最後得到粒徑最小之摻雜球體，對光子晶體能階之微調有最好的效果。

關鍵字

金屬矽化物 ； 光學常數 ； 抗反射層 ； 光子晶體 ； 光子能階

並列摘要

Metal silicide and photonic crystals play important roles in optoelectronic devices. In this thesis, we study optical properties of these two kinds of materials. The first part of thesis is metal silicide, titanium silicide with. Titanium silicide is very suitable as gate materials in next-generation photo detector for its good thermal stability and lowest sheet resistance among all of metal silicides. We characterize the optical properties , reflective index and extinction coefficient, of titanium silicide by ellipsometryin the visible regime for photodetector application. Since ArF laser (193nm) and F2 laser (157nm) are light sources of optical lithography for the generation of less than 100 nm , we also characterize optical constants of titanium silicide in the 193nm and 157nm wavelength regimes. We find titanium silicide has high reflectance in the wavelength regime 450nm~750nm, which is an important range for photodetector. Therefore, we designe and fabricate an antireflective coatings for wavelength between 450nm~750nm, then the reflectance in the range is reduced to less than 5%. For optical lithography application, we also fabricate bottom antireflective coatings of titanium silicide in 193nm and 157nm for the reduction of standing-wave effect..
In the photonic crystals study, we use well-mixed colloidal nanomaterial in different sizes to form binary opals. By this method, we can fine-tune the photonic bandgap within 1~2nm. Besides, by changing the size and contents of the small colloids, we can be aware of how the smaller one affects the bandgap and crystal structure of binary opals. We also find the smallest size of doped collide has significant effect.

並列關鍵字

silicide ； optical constants ； anti-reflective coating ； photonic crystal ； photonic bandgap

參考文獻

[1] S. P. Murarka, Silicides for VLSI Application,Academic, Orlando (1983) p1.

[3] J. O. McCaldin, and H. Sankur, Appl. Phys. Lett. 20 (1972) p.171.

[4] T. M. Reith, and J. D. Schick, Appl. Phys. Lett. 25 (1974) p.524.

[5] H. M. Naguib, and L. H. Hobbs, J. Electroche. Soc. 125 (1978) p.169.

[6] A. Danald, Semiconductor physics and devices, IRWIN (1997).