利用應力增強光通訊系統元件與電路之性能

Strain-enhanced Device and Circuit for Optical Communication System

余名薪(Ming-Hsin Yu)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.01744

摘要

本論文中，我們將介紹機械/封裝式應力技術與光通訊系統的基本概念，而主要的重點則為光通訊系統接收端前端之光感測元件與類比電路之建構與效能之提升。在第三與第四章中，我們分別設計了一個具有金氧半穿遂二極體結構之光偵測器與一個使用N型場效電晶體形式之主動電感的轉阻放大器，經由拉伸式的應力，光偵測器之光電響應及轉阻放大器之頻寬皆可以達到一定程度的提升。在第五章中，我們則設計了一個以高速應用為考量的轉阻放大器。最後，在第六章中，我們將討論及模擬一個由矽鍺異質接面雙載子電晶體所建構之BiCMOS式新型主動電感。

關鍵字

應變矽 ； 光通訊 ； 光偵測器 ； 轉阻放大器 ； 主動電感

並列摘要

In this thesis, the basic concepts of mechanical/package strain technique and optical communication system are described. Then the focus will be on the construction and performance enhancement of the photo sensing device and analog circuit in the optical communication system receiver front-end. In chapter 3 and chapter 4, a photodetector with NMOS diode structure and a transimpedance amplifier (TIA) adopting NMOSFET active inductor are designed, and through tensile strain, their responsivity and bandwidth can be enhanced respectively. Chapter 5 introduces another transimpedance amplifier designed for high speed applications. Finally, in chapter 6, a novel SiGe HBT BiCMOS type active inductor is discussed and simulated.

並列關鍵字

Strained-Si ； Optical Communication ； Photo Detector ； TIA ； Active Inductor

參考文獻

[1] J.L. Hoyt, et al., “Strained Silicon MOSFET Technology,” IEDM Tech. Dig., pp. 23-26, 2002.

[2] K. Rim, et al., “Low Field Mobility Characteristics of Sub-100 nm Unstrained and Strained Si MOSFETs,” IEDM Tech. Dig., pp. 43-46, 2002.

[3] T. Ghani, et al., “A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors,” IEDM Tech. Dig., pp. 978-991, 2003.

[4] S. Maikap, et al., “Mechanically Strained Strained-Si NMOSFETs,” Electron Device Letters, Vol. 25, pp. 40-42, May 2004.

[5] R. A. Soref, “Silicon-based optoelectronics,” Proc. IEEE, vol. 81, pp. 1687-1706, Dec. 1993.