薄膜體聲波濾波器與低雜訊放大器之整合研究

Study on the Integration of Film Bulk Acoustic Wave Filters with Low Noise Amplifiers

林鴻仁(Hon-Ren Lin)

指導教授 ： 張培仁

國立臺灣大學/工學院/應用力學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.01894

摘要

隨著通訊系統以及無線感測網路系統的快速發展，體積小、成本低、更具效率的元件急需開發，為達到這個目的，系統單晶片以整合積體電路為目標。然而電路中，被動元件往往會因為矽基材，而損失大部分的能量，譬如說電感的Q值不易提高，而且所佔用的面積也很大。因此，開發適用於RF頻段的薄膜體聲波共振器，不但Q值高、面積小，同時也可以和積體電路製程整合。以薄膜體聲波濾波器過濾訊號，比以往表面聲波元件和陶瓷元件更小、更具效率。

此論文以薄膜體聲波濾波器與CMOS積體電路整合電路為目標，利用聯電0.18um 1P6M CMOS製程設計射頻前端低雜訊放大器，接著在下線回來的晶片上，以微機電後製程製作薄膜體聲波濾波器，預期將放大、濾波兩功能結合起來。

在本篇論文中，除了將薄膜體聲濾波器與低雜訊放大器整合在同一軟體模擬，加速了元件設計、系統整合的速度，也提出了相容於CMOS電路的薄膜體聲波濾波器、共振器的微機電製程。此製程主要是以面加工技術(surface micromachining)為主，比體加工技術(bulk micromachining)更相容於CMOS電路。以上述之軟體整合以及製程技術為基礎，即可將濾波器與放大器的電路設計、分析、製程整合同時達成。除了對薄膜體聲波共振器等相關技術有重大影響之外，對於其他射頻元件整合與系統單晶片達成，亦有相當貢獻。

關鍵字

薄膜體聲波共振器 ； 薄膜體聲波濾波器 ； 低雜訊放大器 ； 系統單晶片

並列摘要

With the great demand of mobile communication systems and sensor network system, smaller, cheaper, and more efficient devices are required. However, passive elements, such as inductors, usually suffer from great loss in silicon substrate. A thin film bulk acoustic wave resonator (FBAR) is a solution for the problems because of high-Q, smaller volume, and integration compatibility. Meanwhile, it has been demonstrated that filter composed of FBARs is superior to the surface acoustic wave (SAW) filter and ceramic filter at even higher frequency.

In this thesis, the integration of FBAR filter and low noise amplifier (LNA) is the goal. MEMS processes would be implanted on chip fabricated by UMC 1P6M CMOS process to integrate filter and amplifier functions.

Besides co-simulation of FBAR filter and LNA on the same software platform, processes of FBAR or FBAR filter compatible with CMOS IC are demonstrated in this thesis. The processes are realized by surface micromachining, which is more feasible than bulk micromachining in integration. Based on these techniques, the design, simulation, and fabrication of FBAR filter and LNA can be done together, which contribute to FBAR technologies and SOC integration of RF components.

並列關鍵字

Film Bulk Acoustic Wave Resonator ； FBAR Filte ； LNA ； SOC

參考文獻

[1] Y. Satoh et al., “Development of Piezoelectric Thin Film Resonator and Its Impact on Future Wireless Communication Systems,” Japanese Journal of Applied Physics, Vol.44, No.5A, pp.2883-2894, 2005.

[2] J.F. Carpentier et al., “A SiGe:C BiCMOS WCDMA Zero-IF RF Front-End Using an Above-IC BAW Filter,” Proc. ISSCC 2005, pp. 394-395, 2005.

[3] M. Aissi et al., “A 5.4GHz 0.35um BiCMOS FBAR Resonator Oscillator in Above-IC Technology,” Proc. ISSCC 2006, pp. 316-317, 2006.

[4] Y.H. Chee et al., “A Sub-100μW 1.9-GHz CMOS Oscillator Using FBAR Resonator,” Proc. 2005 IEEE Radio Frequency Integrated Circuits Symposium, pp.123-126, 2005.

[5] M. A. Dubois, and P. Muralt, “Stress and Piezoelectric Properties of Aluminum Nitride Thin Films Deposited onto Metal Electrodes by Pulsed Direct Current Reactive Sputtering,” Journal of Applied Physics, Vol.89, No.11, pp.6389-6395, 2001.