鍺量子點發光二極體 有無矽緩衝層之電激發光特性探討

Electroluminescence properties of Ge dots LEDs with or without Si buffer layer

賴盈至(Ying-Chih Lai)

指導教授 ： 管傑雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.01985

摘要

矽/鍺光電元件具有可直接與矽積體電路整合的優點，因此製程上的成本將可獲得降低。此外由於量子結構之異質接面結構的長晶技術進步，近來矽鍺異質接面的光電元件特性已被廣為研究。

在本研究中，使用超高真空化學氣相沉積，成長十週期的Si/Ge量子點結構，並分兩種結構；一種1296(no buffer)就是成長完Ge量子點主動區之後，直接成長P型區；另一種1123(Si buffer)則是在成長完Ge量子點主動區之後，先成長一層輕摻雜的Si buffer，再成長最後的P型區，成長此層的目的在避免P型區影響主動區的摻雜。

我們的論文中將對兩種發光機制作探討。我們首先真對測量出來的發光頻譜(EL)和變溫的發光強度作分析，然後提出可能機制。接下來我們利用製程前退火的方式企圖改變量子點位能井的深度來證實我們所提出來的發光機制是正確的。

關鍵字

矽/鍺光電元件 ； 矽積體電路矽鍺異質接面 ； Si/Ge量子點 ； 製程前退火 ； 矽緩衝層 ； 電激發光頻譜

並列摘要

The advantage of the optical electronic component made up by silicon andgermanium materials is that it could be fully compatible with the Si-based microelectronic chips.
Therefore, the cost of the fabrication could decrease. In addition, the growth techniques for quantum
heterojunction structures are in advanced and then the heterojunction structure of silicon or germanium has been studied far and wide recently.

In this study, the light-emitting diodes (LEDs) with multi-periods of Si/Ge quantum dots structures are used. The ten periods Si/Ge quantum dots structure are grown by UHV/CVD system .There are two samples. One of our samples is called 1296(no buffer), which is grown P+doped regon right after growing ten periods Si/Ge quantum dots
structure.Another sample called 1123(Si buffer),which is grown a layer of Si buffer before growing P+doped regon, is different from 1296(no buffer).To grow the layer of Si buffer is insulate active region from P+doped region.

We will focus the mechanism of two samples. The study starts by the measurements of the EL spectra with different temperature. We will discuss the mechanism for our sample.
After that, we will use the method of pre-anneal to prove our mechanism is right.

並列關鍵字

Si/Ge optical electronic device ； Si-based microelectronic chips ； heterojunction structure ； Si/Ge quantum dots ； pre-anneal ； Electroluminescence

參考文獻

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