雪崩光偵測器之電性分析及蓋格模式雪崩光偵測器在被動截止電路下之特性

Electrical analysis of Avalanche Photodiode and Characteristics of Geiger-mode Avalanche Photodiode on Passive Quenching Circuit

許志騰(Chih-Teng Hsu)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2019年)

https://doi.org/10.6342/NTU201901884

摘要

本論文分為兩個部分討論雪崩光偵測器，前面部分為平面型磷化銦/砷化銦鎵SAGCM(即吸收、漸變、電荷、倍增各層分離)結構雪崩光偵測器的電性量測，包含元件電流-電壓分析、電容-電壓分析和溫度變化對元件特性的影響，並且探討元件圖形參數對擊穿電壓、崩潰電壓的影響。由電流-電壓量測結果來看，雪崩光偵測器保衛環與中央區之間沒有間距的情況下，擊穿電壓最小，崩潰電壓最大，而崩潰前的暗電流也較大。也由變溫電流-電壓量測得知此雪崩光偵測器暗電流的主要來源為吸收層砷化銦鎵的產生-復合電流，且溫度越高崩潰電壓越大。
後面部分為蓋格模式矽雪崩光偵測器操作在被動截止電路的實驗，並以被動截止電路量測雪崩光偵測器真正的崩潰電壓值和內電阻，也提出了傳統被動截止電路模型需修改的地方。

關鍵字

雪崩光偵測器 ； 磷化銦 ； 砷化銦鎵 ； 暗電流 ； 蓋格模式雪崩光偵測器 ； 被動截止電路

並列摘要

This thesis is divided into two parts to discuss the Avalanche Photodiode(APD). The front part analyses the electrical properties of the planer-type InP/InGaAs SAGCM (Separate Absorption, Grading, Charge, and Multiplication) APD. The measurement includes current-voltage analysis, capacitance-voltage analysis, and the effect of temperature variation on device. And we also discuss the influence on punch-through voltage and breakdown voltage with different pattern parameters. From the result of current-voltage measurement, when there is no spacing between the guard ring and the active region, the punch-through voltage is the smallest, the breakdown voltage is the biggest, and the dark current before breakdown is larger than others. It is also known form variable temperature current-voltage measurement that the main source of the dark current is generation-recombination current from InGaAs absorption layer, and the higher the temperature, the larger the breakdown voltage.
The latter part is the measurement of Geiger-mode Si-APD operates on Passive Quenching Circuit(PQC). And we measure the real breakdown voltage and APD internal resistance with PQC. At last, we also propose the place where traditional PQC model needs to be modified.

並列關鍵字

Avalanche Photodiode(APD) ； InP ； InGaAs ； Dark current ； Geiger-mode APD ； Passive Quenching Circuit(PQC)

參考文獻

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