鈹摻雜砷磷銻化銦以及磷銻化銦塊材之光激發螢光頻譜分析

Photoluminescence study on Be-doped InAsPSb and undoped InPSb bulk layers

陳一誠(Chen-I Chen)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.02061

摘要

在此篇論文中，我們研究以分子束磊晶機所成長的鈹摻雜砷磷銻化銦以及晶格匹配砷化銦的銻磷化銦塊材的光激發螢光頻譜。鈹摻雜砷磷銻化銦的低溫光激發螢光頻譜顯示出峰值在高能量的不對稱性線型。這個線形跟其他大量摻雜N-type之砷化鎵以及磷化銦的光激發螢光頻譜的線型類似。我們把這個現象歸類於從導電帶(conduction band) 的帶尾能態 (band-tail state)躍遷至退化的(degenerate) 共價帶(valence band)放光所主導。這種不對稱的線型是由於帶尾能態，使這個電子躍遷不需要動量守衡。我們做了對於大量鈹摻雜砷磷銻化銦的理論模擬分析，使用了包含伯斯坦-摩斯偏移(Burstein-Moss shift) 以及多體效應(many-body effect)。由於帶尾能態跟導電帶中間的能量差異，其結果高於我們的實驗數據大約~20毫電子伏特。
我們在晶格匹配砷化銦的銻磷化銦塊材的光激發螢光中，解析出兩種放光模式。其中我們將類似高斯曲線的螢光模式歸咎於深階能階所造成。它的特性可以使用組態座標模型(configuration-coordinate model)來解釋。而我們將另依個解析出來再低能量區域的放光模式，歸咎於在帶尾能態的載子複合機制。

關鍵字

鈹摻雜 ； 砷磷銻化銦 ； 磷銻化銦 ； 光激發螢光

並列摘要

In this thesis, we have investigated the photoluminescence of Be-doped InAsPSb
and undoped InPSb grown on InAs substrates by gas-source molecular beam epitaxy.
The p-type Be-doped InAs0.66P0.24Sb0.10 shows an asymmetric low temperature PL
spectral line-shape with its peak in the high energy side. This line-shape which is
similar to those of heavily n-doped GaAs and InP, and is ascribed to the transition
from tail states below the conduction band to the degenerate valence bands. The
localized tail states break the momentum conservation, which results in the peculiar
asymmetric line-shape. A theoretical calculation considering the Burstein-Moss shift
and many-body effect in the heavily Be-doped InAs0.66P0.24Sb0.10 was performed. The
calculated energy gaps are higher than the experimental data by ~20 meV, which is
attributed to the energy difference between the tail states and the conduction band
minimum.
For InPSb lattice-matched on InAs, two emission bands were resolved. The first
one is with Gaussian-like line-shape and is attributed to deep-level defects. Its
behavior can be illustrated by configuration coordination model. The other resolved
emission band, located in low energy side, is ascribed to the carrier recombination in
the tail states.

並列關鍵字

Be ； Photoluminescence ； InAsPSb

參考文獻

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