發光性Ⅱ-Ⅵ族半導體奈米粒子之合成與應用

在這個研究工作中，我們嘗試著四種不同的膠體化學法，合成出一系列不同大小、形狀的發光性Ⅱ-Ⅵ族半導體奈米粒子。首先修正了Pietro的方式，用經濟簡單的方式合成出大量CdS；接著改變了三種不同的界面活性劑，合成出高品質、不同螢光波長的CdSe：TDPA/TOPO/TOP系統可合成出長條狀CdSe，並可藉著改變前驅物Cd/Se比例來控制其長寬比；OA/ODE非配位溶劑系統經濟安全，可合成出粒徑較小的CdSe；HDA/TOPO/TBP系統得到的CdSe品質最好，可應用於光電元件上。此外，我們也對CdSe表面做修飾，包覆上高能隙材料ZnS形成核殼型結構，並且將量子產率提昇三倍至49%。改變反應條件，可以得到螢色光相異的CdSe奈米粒子，與電洞傳輸材料TPD混合，製作出量子點發光二極體元件。利用這些不同色光的CdSe作為發光源，我們就能調控元件之電激發光顏色。

關鍵字

CdSe ； CdSe/ZnS ；量子點發光二極體

並列摘要

In our study, we tried to synthesize series of different sizes and shapes of Ⅱ-Ⅵ semiconductor nanoparticles through four colloidal chemical methods. First, modified Pietro’s method was used to synthesize CdS nanoparticles; then we changed three different surfactants to synthesize high quality CdSe nanoparticles: in the coordinating mixture TDPA/TOPO/TOP, rod-like CdSe was prepared and the aspect ratio could be controlled by changing precursor ratio (Cd/Se); in the noncoordinating system OA/ODE, we could prepare small size of CdSe more economically. Finally, high quality CdSe was prepared with HDA/TOPO/TBP mixture and applied on light emitting diode. Besides, we overcoated a higher band gap material ZnS on CdSe surface. The quantum yield of modified core-shell nanoparticles could be increase 3 times to 49%. By varying reaction conditions, we could prepare CdSe nanoparticles with different fluorescence peaks. Incorporating these CdSe nanoparticles with hole transport material TPD could fabricate quantum dot light emitting diode. The electroluminescence of device could be tuned by using these different fluorescence CdSe nanoparticles as lumophores.

並列關鍵字

Quantum dot light emitting diode ； CdSe ； CdSe/ZnS

參考文獻

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發光性Ⅱ-Ⅵ族半導體奈米粒子之合成與應用

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