氮化鋁鎵/氮化鎵高電子遷移率場效電晶體之製作與特性研究

Fabrication and Characterization of AlGaN/GaN High Electron Mobility Field Effect Transistor

金胤軒(Yin-Shuan Chin)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.10460

摘要

中文摘要

本研究參考傳統歐姆接觸製程，設計元件的歐姆接觸，並利用環形傳輸線模型(Circular transmission line model，CTLM)，蒸鍍金屬鈦/鋁/鈦/金(30 nm/120 nm/30 nm/150 nm)，在800度30秒的熱退火條件下，製作出0.47 Ω-mm的歐姆接觸電阻值；並發展歐姆掘入製程，即在歐姆接觸金屬之製作前，先使用蝕刻法，移去淺層歐姆接觸區域之氮化鋁鎵，期望得到增強的歐姆接觸特性。我們使用原子力顯微鏡(Atomic force microscope, AFM)與X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)，分析歐姆掘入製程完成的樣品表面狀態，並量測得其歐姆接觸電阻值為從0.47 Ω-mm降低至0.31 Ω-mm，然而片電阻的變化也從385 Ω/sq增加到489 Ω/sq。
本研究繼而將歐姆掘入製程整合進入氮化鋁鎵/氮化鎵高電子遷移率場效電晶體製程中，並針對整合前後的差異，以閘極長度與寬度為2

關鍵字

氮化鋁鎵/氮化鎵高電子遷移率場效電晶體 ； 歐姆接觸 ； 歐姆掘入

並列摘要

Abstract
We investigate methods of improving the electric properties of AlGaN/GaN field effect transistor (FET). An ohmic contact resistance of 0.47

並列關鍵字

AlGaN/GaN HEMT ； Ohmic contact ； Ohmic digging

參考文獻

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