- 學位論文
氮化鎵奈米結構發光二極體之製作與特性研究
Fabrication and Characterization of Gallium Nitride Nano-Structure Light-Emitting Diode
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摘要
本論文以探討氮化鎵奈米結構之成長與特性分析為主，分成兩個部分論述。第一部份為V-L-S機制氮化鎵奈米結構之成長，第二部份是氮化鎵奈米發光元件之製作與量測。 首先將敘述實驗室自製V-L-S氮化鎵奈米晶體成長系統，並且使用SEM、PL、XRD、EDS、AUGER、TEM等量測技術，分析氮化鎵奈米晶體之外觀及晶體組成之成分。從PL結果得知晶體激發出中心位置在372nm，半高全寬為16nm的紫外光。由EDS和AUGER元素分析中得知晶體由氮和鎵原子組成，而由XRD和TEM材料分析得知晶體為單晶結構。吾人對此奈米晶體結構完成發光二極體元件之製作，並以電激發光方式進行電性及頻譜量測，得知元件在注入電流由5mA至20mA增加時，發光頻譜中心位置會從590nm藍移至490nm。
並列摘要
In this thesis, I present the growth, analyzing, fabrication, and characterization of gallium nitride (GaN) nano-crystal light emitting devices. The growth of GaN nano-crystal structures was conducted in a home-built vapor-liquid-solid (VLS) system. The following spectroscopic instrument of scanning electron microscopy (SEM), photoluminescence (PL), x-ray diffraction (XRD), energy dispersive spectrometer (EDS), Auger, and transmission electron microscopy (TEM) were used to characterize the morphology, composition, and crystalline properties of the GaN nano-structures grown by the VLS method. From the PL analysis pumped by a 248nm Krypton Fluoride (KrF) excimer laser, we observed a peak emission wavelength at 372nm and a full width at half maximum (FWHM) of 16nm. From the EDS and Auger data analysis we identify the material’s composition to be binary GaN. Data from the XRD and TEM analyses suggest the GaN nano-crystals grown by the VLS method to be single crystalline. Light-emitting devices based upon the VLS-grown GaN nano-structures were further fabricated and characterized. From the electroluminescence (EL) study we observed a spectral blue shift in the emission peak wavelength from 590nm to 490nm as the injection current was increase from 5 mA to 20 mA.
參考文獻
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