單層與雙層金屬氧化物電阻式隨機存取記憶體之研究

本論文先研究單層二氧化鈦、氧化銅以及氧化鎳所做成的電阻式隨機存取記憶體之電阻轉換行為，再研究二氧化鈦與氧化銅之雙層異質接面的電阻轉換行為。我們利用蒸鍍法將鎳金屬沉積在矽基板上，再以熱氧化法形成氧化鎳，用濺鍍法將銅薄膜沉積在ITO基板上，再以熱氧化法形成氧化銅，二氧化鈦則是利用磁控濺射沉積在ITO基板後以熱處理形成銳鈦礦相。　　電壓電流量測的結果觀察到單層金屬氧化物元件皆具有雙極性電阻轉換行為，其高低電阻態之電阻比例大約為10倍到20倍，但發現單層結構的元件高低組態轉換電壓偏高，且重複讀寫次數較低。　　在氧化銅/氧化鎳、氧化鎳/二氧化鈦以及氧化銅/二氧化鈦的異質雙層結構中，我們發現在單層二氧化鈦上再沉積銅薄膜後以熱氧化形成氧化銅及二氧化鈦的雙層結構有雙極性電阻轉換的特性，其高低組態的轉換電壓只需0.2V及-0.8V，可重複讀寫次數也較單層結構元件高出許多，且其高阻態電阻值之標準差值較單層結構之二氧化鈦減少許多。我們研究結果發現異質雙層結構的元件較單層結構元件有較佳的特性及穩定性。

關鍵字

電阻式記憶體；氧化銅；二氧化鈦；單層；雙層；憶阻層

並列摘要

In this thesis we report the study of the switching behavior of resistive random access memory (RRAM) made by using single and double layers metal oxides. In this study, NiO is made by oxidization of Ni thin film that was thermally evaporated on Si substrate, CuO is made by oxidization of thin Cu film that was sputtered on ITO glass, and TiO2 thin film is obtained by sputtering of bulk TiO2 on to ITO glass. The metal oxides were then characterized by using scanning electron microscope and X-ray diffraction. IV measurements indicate that for the RRAM made by using single layer metal oxide, NiO, CuO and TiO2, the devices exhibit bipolar switching behavior, has a high /low resistance of about 10 to 20 and the set-rest voltages of these devices are around a few volts. Double layer heterostructure metal oxide RRAM devices, including CuO/NiO, NiO/TiO2, CuO/TiO2 were also studied. We found that the device made by using CuO/TiO2 is most suitable for making RRAM devices. The set-reset voltage of the device is 0.2V and -0.8V, respectively, the lowest set-rest voltage ever reported for a RRAM devices. In addition, this device also has a better endurance and is more stable than a single layer device.

並列關鍵字

rram ； bipolar ； CuO ； TiO2 ； single layer ； double layer ； memory resistative layer

參考文獻

[8] 簡昭欣、呂正傑、陳志遠、張茂男、許世祿、趙天生，"先進記憶體簡介"，國研科技，1，31，(2004)

[1] Liu, Xinjun, et al. "Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices. " Electron Device Letters, IEEE Vol.34,2 (2013): 0741-3106.

[2] Zhou, P., et al. "Role of TaON interface for CuxO resistive switching memory based on a combined model." Applied Physics Letters 94.5 (2009): 053510-053510.

[3] Chen, A., et al. "Switching characteristics of CuO metal-insulator-metal resistive memory." Applied Physics Letters 91 (2007): 123517.

[4] J. S. Choi., et al. " Different resistance switching behaviors of NiO thin films deposited on Ptand SrRuO3 electrodes ." Applied Physics Letters 95 (2009): 022109.

國際替代計量

單層與雙層金屬氧化物電阻式隨機存取記憶體之研究

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