量子點紅外線偵測器之成長與光電特性

The Growth and Opto-electronic Properties of Quantum Dot Infrared Photodetector

蔡昆霖(Kun-Lin Tsai)

指導教授 ： 李嗣涔

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.02587

摘要

本篇論文探討分子束磊晶成長砷化銦/砷化鎵量子點的特性隨著不同砷化鎵空間層的成長溫度或成長速率的變化。根據原子力顯微鏡(AFM)量測和光激放光頻譜(PL)可得知，較高的砷化鎵空間層成長溫度的量子點擁有較好的光激放光特性。另一方面，我們也推論在較高的成長速率下，較短的銦原子遷移長度造成較不顯著的量子點聚合效應。除此之外，藉著掃描式電容顯微術(SCM)，我們發現電荷分佈會隨地表形貌的起伏而改變。另外，藉由在砷化銦量子點上蓋上2奈米的鋁砷化鎵，已經完成一個增強橫向電波的多波段量子點紅外線偵測器。並且，在快速熱退火(RTA)之後，原本橫向電波主宰的波峰能轉變成橫向磁波主宰，反之亦然。此現象是因快速熱退火在量子點的邊界與其圍繞的材料產生了缺陷，所以釋放了在量子點內部的壓縮應力。

關鍵字

量子點紅外線偵測器

並列摘要

The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. According to atomic force microscope (AFM) measurement and PL spectra, the QDs with higher GaAs spacer growth temperature exhibit better luminescent characteristics. On the other hand, it is inferred that the shorter migration length for the In atoms under high growth rate results in less prominent QDs coalescence. Besides, it is found that the charge distribution changes with surface topography by scanning capacitance microscopy (SCM). In addition, by utilizing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric (TE)-field-enhanced multicolor quantum dot infrared photodetector (QDIP) has been achieved. Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. This phenomenon results from the RTA creating defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs.

並列關鍵字

Quantum Dot Infrared Photodetector

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