- 學位論文
以砷化鋁鎵實現之類人眼光偵測器
Processing and characterization of ambient light detector implemented by AlGaAs
摘要
本研究利用多層AlxGa1-xAs結構，來實現反應頻譜趨近CIE國際照明協會制訂的視見函數V(λ)的光偵測器元件。我們以AlxGa1-xAs PIN結構作為主要的吸收層，其x成分在0.53~0.61。在PIN結構中我們加入低x的連續成分漸變層或步階成分變化層以修整長波長的反應頻譜譜型。而在400nm∼600nm的波段我們利用Al0.73Ga0.27As/GaAs結構作為濾波層以濾除過強的響應。完成的最佳偵測器元件其頻譜峰值為552nm，而整體反應頻譜與CIE視見函數的f’1誤差為19.4%。此外我們也將彩色光阻塗佈在不同結構參數的偵測器元件之上，最佳元件的頻譜峰值為556nm、與CIE視見函數的f’1誤差僅有7.5%。
並列摘要
The purpose of this study is using AlGaAs multi-layer structures to realize a photometric photodetector with a responsivity spectrum match to the CIE standard photopic luminous function. These structures used an AlxGa1-xAs PIN junction to absorb the visible light. The x value is from 0.53 to 0.61. A compositional linear-graded or step-graded layer of AlGaAs with low Al content was inserted into the PIN junction to tailor the spectrum in the long wavelength region to the luminous function. For the short wavelength region, we used an Al0.73Ga0.27As/GaAs composite layer as a filtering layer to reduce the response so as to fit the luminous function. The best device has a peak wavelength of 552nm, and the CIE f’1 error of the overall responsivity is 19.4%. We also made use of the color resist to adjust the responsivity spectrum of the photodetectors. The CIE f’1 error of the best resist-coated device is only 7.5% with a peak wavelength of 556nm.