介電材料之靜電吸盤吸附力探討

靜電吸盤（Electrostatic Chuck,ESC）已經廣泛的被半導體界所使用，而現在更應用到其他的業界中，例如應用在面版廠中可拿來固定ITO導電玻璃。此零組件之應用範圍日漸增加。在早期，靜電吸盤只用於吸附晶圓這方面，但是靜電吸盤還有能力可以去吸附其他類別的材料，所以根據觀察，靜電吸盤的應用範圍應該會越來越廣。本論文即是再討論各種不同介電性質之材料對於靜電吸盤吸附力之影響。本實驗利用靜電吸盤之測試平台，針對五種不同介電性質之材料做靜電吸盤之吸附力測試，由實驗結果中發現，靜電吸盤對於不同材料之吸附力會因其介電常數之不同而不同，其吸附力大小與吸附材料之介電常數呈現一正比的關係。經由理論中解釋會發生此現象的原因是因為影響靜電吸盤吸附力中的一項參數ε(介電常數,Dielectric constant)會因吸附物之介電常數不同而改變，原本之ε值會因為靜電吸盤與材料並聯而改變，進而影響吸附力之大小，此現象之推測在本論文中有詳細之解釋。

關鍵字

靜電吸盤；介電材料；介電常數；吸附力；氦氣測漏率

並列摘要

The Electrostatic Chuck (ESC) has been widely used in semiconductor industries, and now is being increasingly applied by other industries, for example, Flat Panel Display (FPD) industry, to hold ITO glasses. Previously, ESC was used only for silicon wafer. Based on our observations, however, the application of ESC might increase to a broader range because of its ability to chuck other materials as well. In this thesis, we discuss the effect of the chucking force on dielectric constants between different materials. We designed a chucking force experiment to test five different materials on an ESC test platform. We found different chucking forces of ESC due to variations in dielectric constant of the material and the chucking force was directly proportional to dielectric constant. We observed that one of the parameters of the chucking force could change with changing chucking material. As a result, original value of dielectric constant will change because ESC becomes multiple to the chucked material. A detailed explanation of this phenomenon has been provided in the thesis.

並列關鍵字

Electrostatic Chuck ； Dielectric materials ； Dielectric Constant ； Chucking Force ； He Leakage Rate

參考文獻

[24] 林志隆, 台灣大學2005碩士論文,電漿製程環境中雙極性靜電吸盤的量測與開發

[2] J.-F.Daviet, L.Peccoud and F.Modon, “Electrostatic clamping applied to semiconductor plasma processing, I.Theroetical modeling,”J.Electrochem.Soc, vol.140, no.11, pp.3256-3261, November 1993

[3] Hongching Shan, Bryan Y. Pu, Hua Gao, Kuang-Han Ke, Jenny Lewis, Michael Welch, and Chandra Deshpandey, “process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck,”J.Vac.Sci.Technol.B, vol.14, no.1, pp.521-526, Jan/Feb 1996

[4] J.-F.Daviet, L.Peccoud and F.Modon, “Heat transfer in a microelectronics plasma reactor,”J.Appl.Phys., vol.73, no.3, pp1471-1479, Feb 1993

[5] Mamour Nakasuji, Hiroyasu Shimizu, Takaaki Kato, “Low voltage and high speed operating electrostatic wafer chuck using sputtered tantalum oxide membrane,”J.Vac, Sci.Tcehnol.A., vol.12, no.5, pp.2834-2839, Sep/Oct 1994

國際替代計量

介電材料之靜電吸盤吸附力探討

全文下載

主題瀏覽