含磷氧或碸官能基之雙極性電激磷光主體材料的 合成、性質與應用

Synthesis, Properties, and Applications of Phosphine-Oxide or Sulfone-Containing Bipolar Host Materials for Electrophosphorescent Devices

蔡宛珊(Wan-Shan Tsai)

指導教授 ： 汪根欉

國立臺灣大學/理學院/化學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.10687

摘要

在本論文中，我們設計與合成了一系列新型的雙極性分子做為磷光有機發光二極體的主體材料。利用具有高電洞傳輸性質的咔唑及其衍生物mCP為核心，使用簡單的合成方法於咔唑三號或六號位置上，引入具有電子傳輸性質的磷氧官能基 (Phosphine oxide) 與碸官能基 (Sulfone)，合成能同時傳遞電洞與電子的雙極性(Bipolar) 或雙偶極性 (Ambipolar) 分子，改變分子所帶電洞傳輸單元咔唑與電子傳輸單元的不同比例，研究不同電子傳輸單元與比例調控對元件效果的影響。這些新型材料具有良好的熱穩定性及高三重態能階，應用在磷光元件中都有不錯的表現。POCz3單層結構，搭配藍色磷光FIrpic (ηext = 9 %, ηp = 10.4 lm/W, ηc = 21.3 cd/A)；綠色磷光Ir(ppy)3 (ηext = 11.1 %, ηp = 28 lm/W, ηc = 38.6 cd/A)；紅色磷光Ir(mpq)2acac (ηext = 5 %, ηp = 4 lm/W, ηc = 5 cd/A)，單層白光元件 (ηext = 7.5 %, ηp = 5 lm/W, ηc = 12 cd/A)，CIE (0.33, 0.36)。POmCP與藍色磷光FIrpic三層元件結構表現 (ηext = 14 %, ηp = 28 lm/W, ηc = 29.9 cd/A)。SO2mCP搭配綠色磷光Ir(ppy)3 (ηext = 12.1 %, ηp = 40.3 lm/W)，相同結構下Cbz-di-SO2 (ηext = 12.8 %, ηp = 54.5 lm/W)。

關鍵字

磷氧 ； 碸

並列摘要

In this thesis, we have designed and successfully synthesized a series of novel bipolar host for the use in PhOLED devices. We used efficient synthesis methods to introduce electron-withdrawing groups, phosphine oxide or sulfone, onto the 3-or 6- positions of carbazole or mCP. The new bipolar molecules containing hole- and electron-transport moieties exhibit comparable electron and hole mobilities, appropriate energy levels, and high triplet energy due to limited π-conjugation of the carbazole core and the substituents. PhOLED devices incorporating these new bipolar hosts exhibit excellent efficiencies. POCz3 can serve the material in single-layer PhOLED doped with FIrpic (ηext = 9 %, ηp = 10.4 lm/W, ηc = 21.3 cd/A), Ir(ppy)3 (ηext = 11.1 %, ηp = 28 lm/W, ηc = 38.6 cd/A), and Ir(mpq)2acac (ηext = 5 %, ηp = 4 lm/W, ηc = 5 cd/A), single- layer white OLED (ηext = 7.5 %, ηp = 5 lm/W, ηc = 12 cd/A) with CIE (0.33, 0.36). POmCP doped with FIrpic has the efficiencies of ηext = 14 %, ηp = 28 lm/W, ηc = 29.9 cd/A. The host material, SO2mCP, doped with green emitter, Ir(ppy)3, exhibits the efficiencies of ηext = 12.1 %, ηp = 40.3 lm/W, whereas the device with Cbz-di-SO2 host reaches ηext = 12.8 %, ηp = 54.5 lm/W. Furthermore, we also demonstrated the influences of device performances attributed by different ratios of hole transport unit to electron transport unit of the host materials.

並列關鍵字

phosphine oxide ； sulfone

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