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  • 學位論文

電子束顯影技術與其應用在幫助在鍺量子點的成長

Electron Beam Lithography Technology and Application on the Mesas to Assist Germanium Quantum-Dots Growth

指導教授 : 管傑雄

摘要


奈米科技是現今很熱門的一門科學,不論是在電路製造,光電元件,生物研究和微機電在奈米尺度都有發展。 在奈米科技的領域電子束顯影系統扮演著一個很重要的腳色。這篇論文主要介紹ELIONIX所提供的ELS-7500EX此系統,我們不只做了一系列圖案的校正而且還研究了鍺量子點在奈米壕溝內的成長情形,希望對後來的研究者有幫助。

關鍵字

奈米 電子束

並列摘要


In all fields of technology, nano-technology is today’s buzzword. The applications of the nanometer-order technology are needed, for example, in IC processing, optoelectronic devices, DNA researching, and micro machining. Nano-technology can be roughly divided into non-semiconductor-based field and semiconductor-based field. Because semiconductor-based technology has the advantage of process integration, mass and uniform production can be achieved. Electron beam lithography system plays an important role in nano-technology. It is capable of exposing nano-patterns that photolithography fail to do. In this thesis, we will mainly introduce the ELS-7500EX, an electron beam lithography system provided by ELIONIX, and exploit it to delimit nano-patterns, such as lines and circles. In addition, the study of using electron beam lithography system (EBLS), reactive ion etching (RIE) and ultra high vacuum chemical vapor deposition (UHV-CVD) to form Ge quantum dots on silicon mesas is discussed.

並列關鍵字

e-beam nanometer

參考文獻


[1] D. F. Kyser, and N. S. Viswanathan, “Monte Carlo simulation of spatially distributed beam in electron-beam lithography,” J. Vac. Sci. Technol., Vol. 12, No. 6, Nov./Dec. 1975
[2] E. A. Dobisz, C. R. K. Marrian, R. E. Salvino, M. A. Ancona, F. K. Perkins, and N. H. Turner, “Reduction and elimination of proximity effects,” J. Vac. Sci. Technol. B 11(6), Nov/Dec 1993
[3] G. Owen, J. Vac. Sci. Technol. B 8, 1889 (1990); Opt, Eng. 32, 2446 (1993)
[4] “ZEP520A Technical Report”, ZEON CORPORATION.

被引用紀錄


林暉凡(2007)。利用光柵結構以增強拉曼散射之研究〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2007.03360

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