輻射熱追蹤法應用於快速熱處理爐之研究與探討

Analysis of Thermal Radiation in a Rapid Thermal Processor Using Ray Tracing

劉奕良(I-Liang Liu)

指導教授 ： 翁宗賢

國立臺灣大學/工學院/應用力學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.02777

摘要

由於快速熱處理爐能在短時間內釋放高溫的熱輻射，在對晶圓進行熱製程時，有著加熱時間短、低熱預算及低雜質擴散的優點。當半導體產業逐漸以奈米元件及大尺寸晶圓製程為主後，快速熱處理製程(rapid thermal processing，簡稱RTP)便被廣泛的使用。在製程當中最常遇到的問題是晶圓溫度分佈的不均勻引發錯位的晶圓缺陷等。
本文以水平式快速熱處理機台為主，藉著數值模擬爐內的熱傳現象，忽略機台內的熱對流場與晶圓內部的熱傳導現象，利用光線追蹤法來探討入射晶圓表面的輻射通量分佈。藉著調整燈管位置與徑向發能量的調整來探討對入射晶圓不均勻度的影響，接著加入反射板與三平面反射鏡，調整其對晶圓不同的轉折角度探討對晶圓邊緣輻射損失的效果。
最後調整反射罩形狀與位置，由於反射罩導致晶圓中心區域輻射量較高，因此將反射罩設定一個可改變位置的區域，探討移動此區域的位置對晶圓邊緣補償，及入射晶圓熱輻射通量的均勻性。

關鍵字

快速熱處理爐

並列摘要

ABSTRACT
Because the lamps can radiate high intensity of thermal radiation onto a wafer within a short time, a RTP features rapid heating, low thermal budget, and low dopant diffusion in semiconductor manufacturing. As the semiconductor industry progresses to nano size and large size of wafer, the RTP attracts varieties of applications. The most often encountered problem in RTP is the temperature nonuniformity in a wafer during processing which may cause major defects of a wafer.
This thesis numerically investigates thermal radiation in a horizontal RTP with negligible conduction and convection in the chamber. Ray tracing technique is employed to compute incident radiation of a wafer during processing. Temperature nonuniformity of a wafer is explored by adjusting locations of lamps. Flat mirrors are positioned in various configurations in order to reduce radiant losses around the edge of a wafer.
Finally, the shapes and locations of the lamp reflector are studied intending to increase incident radiation and uniformity of a wafer. Numerical computations provide a valuable tool for the design and improvement performance of a RTP.

並列關鍵字

RTP

參考文獻

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