多銦氮化銦鎵薄膜之電子傳輸特性

Electron transport in In-rich InxGa1-xN films

林士凱(Shih-Kai Lin)

指導教授 ： 梁啟德

共同指導教授 ： 張本秀(Pen-Hsiu Chang)

國立臺灣大學/理學院/物理研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.02778

摘要

本論文主要是探討多銦氮化銦鎵薄膜InxGa1-xN (x = 1, 0.98, 0.92,
0.8, 0.7) 的電子傳輸性質。我們測量了大溫度範圍下氮化銦鎵的電子
傳輸特性。我們發現在實驗誤差範圍內，樣品的載子濃度在測量的溫
度範圍內幾乎與溫度無關，這是金屬的行為。此外我們利用van der
Pauw 四點量測法計算樣品的電阻率。綜合電阻率與載子濃度的數據
顯示，我們的樣品隨著鎵的成分上升，有一個由金屬到半導體的轉
變。我們也計算了樣品的載子遷移率，載子遷移率在整個量測的溫度
範圍內，隨著鎵成分的升高而降低，這也印證了氮化銦的傳輸特性優
於氮化鎵。由於金屬電阻率在低溫下遵守Bloch T5 定理，對於銦濃
度大於等於92% 的樣品，我們檢查了它們的電阻率與Bloch T5 定
理的符合程度。分析的結果顯示高銦成分的樣品的電阻率非常符合
Bloch T5 定理，從而進一步的支持了高銦濃度的氮化銦鎵薄膜傳輸特
性與金屬十分類似。

關鍵字

氮化銦鎵

並列摘要

This thesis focuses on electron transport properties in InxGa1−xN (x =1,
0.98, 0.92, 0.8, 0.7) thin films. We have performed transport measurements
on InxGa1−xN thin films over a wide temperature range. We observed that
within experimental error, the carrier densities are temperature independent.
Besides, the resistivities, combined with the carrier densities, show
a tendency of transition from metal to semiconductor with increasing Ga
composition. The calculated mobility shows that for metallic like samples
(InxGa1−xN with x ≥0.92), the dominant scattering mechanism is the imperfection
scattering over the whole temperature range. We also showed
that Bloch T5 curves fit very well the resistivities of samples InxGa1−xN
with x =1, 0.98, 0.92, once again supporting that very high In composition
InxGa1−xN films can be considered as degenerate electron systems in which
the Fermi level is much higher than conduction-band bottom over the whole
measurement range.

並列關鍵字

InGaN

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