寬波段廣角度抗反射膜設計之研究

在本論文中，首先介紹多層膜理論分析及最佳化方法，作為抗反射膜設計的理論基礎。一方面利用反應性射頻磁控濺鍍來成長氮氧化矽薄膜，另一方面藉由數值模擬方法，設計可見光波段、廣角度的抗反射膜。雖然中間折射率材無法調製出，但仍獲得氮化矽(折射率2.03)及氧化矽(折射率1.46)的膜材，我們定義評估函數來評估設計膜在可見光波段、廣角度下的抗反射效能，並利用共軛梯度法來最佳化之。我們對太陽電池及發光二極體做簡單假設，實際設計抗反射膜，入射光在可見光波段、0˚~70˚入射角下從空氣到太陽電池僅具有4.46%的低平均反射率；而氮化鎵發光二極體在藍光波長(470nm)及綠光波長(525nm)下，排除全反射效應，從元件發出的光僅有3.04%和3.05%的光被反射。最後，我們也了解當抗反射波段、角度範圍的要求增加，要達到低平均反射率的條件愈嚴苛，實驗上厚度的控制要求要愈精準。

關鍵字

抗反射膜；共軛梯度法；廣角度

並列摘要

In this thesis, we applied the multilayer theory and conjugate gradient optimization method to design the anti-reflection coating layers for GaN-based light emitting diode (LED) and crystalline silicon solar cells. Based on the refractive indices (2.03 and 1.46) of SiOxNy thin films fabricated by RF reactive magnetron sputtering, we designed approximate broadband omnidirectional anti-reflection coating using numerical computation. A merit function was defined to estimate the performance of anti-reflection coating for wide incident angle within the visible range, Using the two-layer anti-reflection design with layer refractive indices of 2.03 and 1.46, our optimized reflectance of bi-layer antireflection coating is about 4.46%, which is averaged over wavelength range of 400 ~ 700nm and incident angle range of 0˚~70˚ . For LEDs, average reflectance (below critical angle ~ 24˚) as low as 3.04% and 3.05% are achieved for blue light (wavelength centered at 470nm) and green light (wavelength centered at 525nm), respectively. In this study, we also found that more accurate control of the bilayer thickness is required while taking broad wavelength and wide incident angle into account.

並列關鍵字

anti-reflection coating ； conjugate gradient method ； wide angle

參考文獻

【1】X. Peng, Z. Wang, D. Dimitrov, T. Boonstra and S. Xue, “Study of SiOxNy as a bottom antireflective coating and its pattern transferring capability”, J. Vac. Sci. Technol. A., vol.25, p.1078, 2007

【2】D. Bouhafs, A. Moussi, A.Chikouche, J.M. Ruiz, “Design and simulation of antireflection coating system for optoelectronic devices: Application to silicon solar cell”, solar energy materials and solar cells, vol.52, p. 79, 1998

【3】B.C. Chakravarty, S.N. Singh and B.K. Das, “Use of Tin oxide as an inexpensive antireflection coating for p on n polycrystalline silicon solar cells”, IEEE electron device letters, vol. EDL-4, No.5, p.138, 1984

【4】P. Menna, G.Di Francia, V.La Ferrara, “Porous silicon in solar cell: A review and a description of its application as an AR coating”, Solar energy materials and solar cells, vol.37, p.13, 1995

【5】Zhizhang Chen, Peyman Sana, Jalal Salami and Ajeet Rohatgi, ”A Novel and Effective PECVD SiO2/SiN Antireflection Coating for Si Solar Cells”, IEEE Transactions on electro devices, vol.40, No.6, p.1161, 1993

國際替代計量

寬波段廣角度抗反射膜設計之研究

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