使用電子束微影製備高載子遷移率之石墨烯場效電晶體

本篇論文的主題圍繞著石墨烯進行，一開始先簡介石墨烯的歷史及基礎特性，藉此對石墨烯有基本認識，並且了解到為何石墨烯會是近期新興的研究題材。石墨烯有許多可研究的領域，而其中石墨烯場效電晶體就是一個相當熱門的元件領域。　　因此，我們開始著手於石墨烯場效電晶體的研究，其高載子遷移率的特性讓石墨烯只要蒸鍍上電極，就可以簡單地贏過其他材料日積月累的成果，儘管如此，人們仍然想要讓其表現更接近理論計算，讓其更臻進步，因此有許多研究團隊藉由提升石墨烯的品質來讓其元件通道表現更好，有些研究團隊透過基板的改質，讓雜質可以去除，修復石墨烯本身的缺陷。　　而在本篇論文中，第一部份測量了石墨烯與金屬之間的接觸電阻，經由檢測多種金屬與石墨烯之間的交互作用，選取了表現最佳的金屬作為後續研究的元件電極。接著，利用電子束微影的方式搭配乾淨的轉印手段，將石墨烯場效電晶體的表現達到其他研究團隊使用單晶石墨烯的水平，透過這樣的方式，可以更有效地降低成長石墨烯的困難，利用較簡單的製程達到最好的元件表現。

關鍵字

石墨烯場效電晶體；電子束微影；傳輸線模型；無高分子轉印法

並列摘要

“Graphene” is the center of the topic in this thesis. First, this thesis reviews the history and fundamental electronic property of graphene, and it explains why graphene became the most popular material recently. Graphene field effect transistor is one of the important research topics among the diverse researches of graphene. Due to the above reasons, this thesis focuses on graphene field effect transistor. The high mobility property result in once the electrode deposit on graphene, it can defeat other material. However, the performance of graphene is expected to be better and better. As a result, some use single crystal graphene that make the channel better, others use self-assembled monolayer to make the wafer smoother. In first part of this thesis, we measure the contact resistance of graphene and metal. Based on the measuring results, we choose the best one to be the electrode of graphene field effect transistor. Furthermore, we use electron beam lithography and polymer free method to reach the single crystal carrier mobility researched by other teams. By this method, we can use polycrystalline graphene to reach higher mobility. Thus, the process will be much simpler than before.

並列關鍵字

graphene field effect transistor ； electron beam lithography ； polymer-free ； Transmission line model

參考文獻

[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, etal., "Electric field effect in atomically thin carbon films," Science, vol. 306, pp. 666-669,Oct 22 2004.

[2] J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, et al.,"Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates," IeeeElectron Device Letters, vol. 30, pp. 650-652, Jun 2009.

[4] X. S. Li, W. W. Cai, J. H. An, S. Kim, J. Nah, D. X. Yang, et al., "Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils," Science, vol.324, pp. 1312-1314, Jun 5 2009.

[5] W. H. Lin, T. H. Chen, J. K. Chang, J. I. Taur, Y. Y. Lo, W. L. Lee, et al., "A Directand Polymer-Free Method for Transferring Graphene Grown by Chemical Vapor Deposition to Any Substrate," Acs Nano, vol. 8, pp. 1784-1791, Feb 2014.

[6] T. Mueller, F. Xia, and P. Avouris, "Graphene photodetectors for high-speed optical communications," Nature Photonics, vol. 4, pp. 297-301, 2010.

國際替代計量

使用電子束微影製備高載子遷移率之石墨烯場效電晶體

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