氮化鎵分佈式布拉格反射鏡與藍紫光雷射二極體之研製

Study of GaN Distributed Bragg Reflector and Its Application to Laser Diode

張家瑋(Chia-Wei Chang)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.10342

摘要

本論文主要內容可分為三部分：第一部分為分佈式布拉格反射鏡(Distributed Bragg Reflector, DBR)的原理、數值模擬及結構設計；第二部分為利用光致化學氧化法在氮化鎵及其相關化合物材料(氮化鋁鎵、氮化銦鎵)上製作出分佈式布拉格反射鏡結構及雷射二極體元件；第三部分為元件光學特性量測。
吾人藉由光激發光( Photoluminescence, PL)的量測方式，量測元件的側向及表面發光光譜。吾人發現製作完DBR結構後的樣品，在側向收光的PL光譜中會多出許多尖峰產生，吾人推測這是DBR結構造成的共振效果；此外，由表面收光的PL光譜結果，發現製作DBR結構的元件其PL峰值強度的增加速率提升為Fabry-Perot樣品的兩倍。

關鍵字

雷射二極體 ； 分佈式布拉格反射鏡

並列摘要

This thesis is distributed into three parts. The first part is about the theory, numerical simulation and structural design of Distributed Bragg Reflector (DBR).The second part is the fabrication of DBR structure and laser diode device on GaN based materials by using Photo Enhanced Chemically (PEC) oxidation method. The third part is the optical measurement and discussion of optical characteristics on our devices.
We measure photoluminescence (PL) spectrum from two directions : one is from sample edge, and the other is from the normal to the sample surface. We find that there exist several peaks in the edge emission PL spectrum for the device with DBR structure. Besides, we find that the increasing rate of peak intensity is twice than those without DBR structure ( Fabry-Perot case) from the PL spectrum for the emitted light collected from the normal to the sample surface.

並列關鍵字

Distributed Bragg Reflector ； Laser Diode

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