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  • 學位論文

藍寶石單晶生長之研究

The Research of Sapphire Single Crystal Growth

指導教授 : 戴怡德
共同指導教授 : 藍崇文

摘要


中文摘要 目前國內生產LED的廠商有60餘家,在全球LED市場佔有率約2成,由於LED能有效的將電能轉換成光,進而達到省電的效果,而藍寶石晶體則是現今LED基板普遍使用的材料,由於如此,使得越來越多人投入研究與開發生產出高品質的藍寶石單晶。而生產藍寶石單晶的方法有許多,但可惜的是用柴式提拉法生長可以市售的藍寶石單晶在全球上並不多見,在國內更是沒有一家廠商可以用柴式提拉法生長的藍寶石單晶達到市售水準。有鑑於此,吾人才投入用柴式提拉法生長藍寶石單晶之研究,並在此方面獲得不錯的結果,也為國內藍寶石單晶生長研究更往前邁向一步。

關鍵字

藍寶石

並列摘要


ABSTRACT Now, there are more sixty manufacturers that produce light emitting diodes (LED) in Taiwan. In the world, they take about twenty percentage at LED market. It can transpose electricity energy into effectually light energy. Due to this function LED have. The one of popular materials in LED substrate is sapphire wafer. More and more people jump into high quality sapphire wafers research and develop. There are several ways that carry out high quality sapphire wafers. Unfortunately, in the world there are very few sapphire wafers can sell by Czochralski method. In Taiwan, no factory achieves this level. Because of this, we try our best efforts to develop the sapphire single crystal growth by Czochralski method. And, we have not bad conclusion. Go ahead one step in Taiwan for sapphire single crystal growth research.

並列關鍵字

Sapphire

參考文獻


35、蔡淳博,等化學計量比鈮酸鋰單晶區熔提拉製程之開發研究,國立台灣大學 化學工程研究所 博士論文,民國94年11月。
2、H. Kopetsch, “Numerical simulation of the interface inversion in Czochralski growth of oxide crystals”, Journal of Crystal Growth, 102 (1990) 505.
3、T. Tsukada, M. HozawaN, N. lmaishi, “Effect of interface inversion on thermal stress field in CZ crystal growth of oxide”, Journal of Chemical Engineering of Japan, 23 (1990) 3 286.
4、J. J. Derby, Q. Xiao, “Some effects of crystal rotation on large scale Czochralski oxide growth analysis via a hydrodynamic thermal-Capillary model “, Journal of Crystal Growth, 113 (1991) 575.
6、E. T. Arakawa, “Optical properties of aluminum oxide in the vacuum ultraviolet”, Journal of Physics and Chemistry of Solids, 29 (1968) 735.

被引用紀錄


羅立翔(2017)。多晶藍寶石基板之抗反射膜層設計研究〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201704141

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