浸水處理後金氧半電容元件氧化層與矽界面特性受氫影響之研究

Study of the Hydrogen Effect on Si-SiO2 Interface Property for MOS Capacitor after Water Immersion

陳碧紅(Pi-Hung Chen)

指導教授 ： 胡振國

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.03110

摘要

在本論文中，我們研究一種金氧半電容元件氧化層與矽界面特性在浸水處理後所受到的氫影響。由於金氧半電容元件之體積小、製程純熟且可供量產等的優點，使得金氧半電容元件可廣泛應用於各領域中，且其特性已經被廣泛的研究。當然，金氧半電容元件亦可作為感測器使用，但仍侷限於溫度感測器、氣體感測器或影像感測器，對溼度感測器而言，則其技術尚未明朗化。再加上水溶液在常溫的環境下，通常會解離出氫離子，使得水溶液中存在有大量的氫離子，因此，當金氧半電容元件經過浸水處理後，其氧化層與矽界面的特性將會受到氫離子的影響而改變電流特性。
在本研究中，我們先探討金氧電容元件與水接觸時間的長短對金氧半電容元件氧化層與矽界面特性造成的影響；先準備二組氧化層厚度不同的金氧半電容元件，一組是具有薄氧化層（1奈米）之金氧半電容元件，另一組則是具有厚氧化層（2.4奈米）之金氧半電容元件，在相同的實驗條件下，探討具有不同氧化層厚度之金氧半電容元件與浸水時間長短的關係。此外，我們也探討了在不同時間的浸水處理後，施加正、負偏壓對不同氧化層厚度之金氧半電容元件所造成的影響。由實驗結果可知，不同的浸水時間與施加偏壓，氫離子對這些金氧半電容元件之氧化物與矽界面的影響所造成的電流特性是相當明顯的，且氧化層厚度的不同，電流特性亦會改變。

關鍵字

界面 ； 氫離子遷移 ； 氧化層 ； 界面缺陷

並列摘要

In this work, we study the characteristic of SiO2-Si interface of MOS capacitor under the influence of hydrogen ion after water immersion. Due to that MOS capacitor has small size, mature technology and can be massively produced，it enables MOS capacitor to be used in variety of applications, and it’s characteristic is also being studied widely. By definition, MOS capacitor can be used for censors, but only under the limitation of temperature sensor, gas sensor and image sensor. However, for the use on humidity sensor, the technology is yet clarified. In addition, the ionization of water would usually produce hydrogen ions under the room temperature and it would be caused the water to contain massive quantity of hydrogen ions. Therefore, the J-V behavior of the SiO2-Si interface of MOS capacitors after water immersion will be changed by hydrogen effect.
In our work, we will discuss the effectiveness of hydrogen ions toward the SiO2-Si interface of MOS capacitors with different immersion time. First we prepare two groups of MOS capacitors which have different thickness of oxide layer； One group has thin oxide layer (1 nm) and the other group has thick oxide layer (2.4 nm). Then we investigate the effect of immersion time is related to the MOS capacitors with different thicknesses. In addition, we immerse the MOS capacitors in the water for different time and apply additional bias voltage, and investigate immersion time effect and bias effect on the MOS capacitors. From the experimental results, we can clearly see that the immersion time and bias effects on the SiO2-Si interface of the MOS capacitors with thin and thick oxide after water immersion are different and obvious. The electrical characteristic of the MOS capacitors will also change with the thickening of the gate oxide.

並列關鍵字

Interface ； Hydrogen Mobility ； oxide ； Dit

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