精密輪磨加工矽晶圓造成表面/次表面破壞之研究

Study on Surface/sub-surface damage induced by Precision grinding of Silicon Wafers

高培晃(Pei-Huang Kao)

指導教授 ： 趙崇禮

淡江大學/工學院/機械與機電工程學系碩士班/碩士(2018年)

https://doi.org/10.6846/TKU.2018.00012

摘要

本研究旨在探討精密鑽石磨削引起的矽晶圓表面/次表面損傷並證明火花散放對加工表面的影響，精密磨削矽晶圓的損傷層通常是由非晶層、差排和微裂紋等缺陷所組成，而本研究發現加工參數對這些缺陷的範圍和分佈有著很大的影響。根據本研究的結果，透過施加中等的火花散放（5~6轉）可以使加工後的表面有效地減小損傷層的厚度，但當火花散放轉數增加到12~24轉時，則效果較無明顯變化。本研究已於12吋矽晶圓上分別透過粗磨與精磨獲得了表面粗糙度Ra小於11 nm和5 nm，同時損傷層的厚度小於180 nm和70 nm的成果。

關鍵字

精密輪磨 ； 表面粗糙度 ； 表面/次表面破壞層 ； 火花散放

並列摘要

This research aims to investigate the surface/subsurface damage of silicon wafer induced by precision diamond grinding. Effort has been made to clarify the effect of spark out on surface integrity of the obtained surface. It is found that the damaged layer of precision ground silicon wafer are typically composed of defects such as amorphous layer, dislocation and micro-cracks. The machining parameters have profound effect on the extent and distribution of these defects. Based on the results of this study, surface generated by applying moderate spark out (5-6 revolutions) can effectively reduce the thickness of the damaged layer. Very little improvement can be obtained when spark out are pushed to 12-24 revolutions. 12" silicon wafers of Ra better than 11 nm and 5 nm and thickness of the damaged layer smaller than 180nm and 70nm are obtained by rough and fine grinding respectively in this research.

並列關鍵字

Precision grinding ； Surface Roughness ； Surface/sub-surface layer ； Spark-out

參考文獻

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