機械化學研磨單晶碳化矽之研究

Study on Mechanical Chemical Grinding of Single Crystal Silicon Carbide

劉子謙(Tsu-Chien Liu)

指導教授 ： 趙崇禮

淡江大學/工學院/機械與機電工程學系碩士班/碩士(2018年)

https://doi.org/10.6846/TKU.2018.00149

摘要

碳化矽（SiC）因其寬能隙，高崩潰電場，高導熱性，高化學穩定性和低固有載流子濃度而受到越來越多的關注，並有很大的潛力成為下一代半導體材料。這些優異的物理特性使SiC成為高功率電子元件的更佳選擇。但是，碳化矽極其堅硬脆弱，加工起來非常困難。表面光潔度差和深度滲透裂紋是加工引起的典型損傷。這項研究在通過機械化學研磨（MCG）加工SiC來提高材料移除率和表面光潔度。在本研究中設計，製造和測試了具有不同百分比鑽石和CeO2的樹脂結合劑砂輪以研磨單晶4H-SiC。在這項研究中，表面光潔度優於5奈米（Ra），平均材料移除率約為1648 μm3/ min。典型的磨削比約為7.78。

關鍵字

單晶碳化矽 ； 磨削加工 ； 機械化學研磨 ； 表面粗糙度

並列摘要

Silicon carbide (SiC) is attracting more and more attention and has great potential to become the next-generation semiconductor material for its wide bandgap, high electric breakdown field, high thermal conductivity, high chemical stability and low intrinsic carrier concentration. These superior physical properties make SiC a better choice for high-voltage power electronics application than silicon. However, SiC is extremely hard and brittle and is very difficult to machine. Poor surface finish and deep penetrated cracks are the typical damage induced by machining. This research aims to improve material removal efficiency and surface finish by machining SiC with mechanical chemical grinding (MCG). Resin bond grinding wheels with different percentage of diamond and CeO2 are designed, produced and tested in this study to grind single crystal 4H-SiC. Surface finish better than 5 nm (Ra) with an average material removal rate around 1648 μm3/min are achieved in this study. The typical grinding ratio is around 7.78.

並列關鍵字

Single Crystal Silicon Carbide ； Grinding ； MCG ； Surface roughness

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