使用以靜電力場輔助電鍍法製備具微米構形聚二氧乙基噻吩-鉑複合薄膜光電致色變元件之製作與性質分析

Fabrication and Characterization of Photoelectrochromic Devices Using Micropatterned Poly(3,4-ethylenedioxythiophene)-Platinum Composited Thin Films Prepared by Electrostatic Field-Assisted Electrodeposition

鄭宗麟(Tzung-Lin Cheng)

指導教授 ： 林正嵐

淡江大學/工學院/化學工程與材料工程學系碩士班/碩士(2017年)

https://doi.org/10.6846/TKU.2017.00301

摘要

本研究以靜電力場輔助電鍍法製備具微米構形聚二氧乙基噻吩-鉑複合薄膜光電致色變元件之製作與性質分析，實驗分為兩部分。
Part 1：以靜電力場輔助電鍍法製備聚二氧乙基噻吩(PEDOT)和鉑複合薄膜，並且改變PEDOT不同析鍍電量參數(15 ~ 35 mC/cm2,mPEDOT Q15 ~ Q35)，對薄膜以光學顯微鏡、循環伏安法、計時安培法及紫外線可見光光譜分析其表面、電致色變和光學性質。由紫外線可見光光譜與電化學測試發現穿透率調幅(delta T)與著色效率(C.E.)以mPEDOT Q25效果最好。再以脈衝電沉積鉑製備出聚二氧乙基噻吩-鉑複合薄膜，藉由改變電鍍的先後順序，製備出mPEDOT、Pt-mPEDOT (先沉積PEDOT)和mPEDOT-Pt (先沉積鉑)薄膜，發現電致色變的應答時間為mPEDOT-Pt < mPEDOT< Pt-mPEDOT。
Part 2 : 以微米構形聚二氧乙基噻吩-鉑複合薄膜作為光電致色變元件(photoelectrochromic device, PECD)工作電極，對電極用15 wt% P25漿料以旋轉塗佈方式塗佈，再以450℃鍛燒。PECD閉環狀態經由紫外燈照光(365 nm, 5 mW/cm2)一分鐘著色，再以關燈閉環或開環去色觀察元件照光應答時間，以微米構形的聚二氧乙基噻吩-鉑複合薄膜的PECD去色應答時間優於聚二氧乙基噻吩的PECD，表示鉑助於電解質中氧化還原對I3-再生還原成I-過程，使去色應答時間縮短。

關鍵字

光電致色變元件 ； 聚二氧乙基噻吩

並列摘要

In this study, the fabrication and characterization of photoelectrochromic devices with micropattern poly(3,4-ethylenedioxythiophene)-platinum composite thin films prepared by electrostatic field-assisted electrodeposition were studied. The experiment was divided into two parts. Part 1 : Micropattern poly(3,4-ethylenedioxythiophene)-platinum composite thin films were prepared by electrostatic field-assisted electrodeposition. The different electrodeposition charge parameters (15 ~ 35 mC / cm2, mPEDOT Q15 ~ Q35) of the thin films were studied. The films were characterized by optical microscopy (OM), cyclic voltammetry (CV), chronoamperometry (CA) and ultraviolet/visible (UV/Vis) spectroscopy to analyze their surface structure, electrochromism and optical properties. UV/Vis spectrum and electrochemical tests showed that mPEDOT Q25 had the best effect on transmittance modulate (

並列關鍵字

Photoelectrochromic Devices ； Poly(3,4-ethylenedioxythiophene)

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