X光吸收光譜對銅摻雜之鈦鎳合金(Ti50Ni50-xCux)電子結構的研究

Electronic Structure of Cu-doped Ti-Ni Alloy(Ti50Ni50-xCux)Studied by X-ray Absorption Spectroscopy

劉柏佑(Bo-You Liou)

指導教授 ： 張經霖

淡江大學/理學院/物理學系碩士班/碩士(2017年)

https://doi.org/10.6846/TKU.2017.01056

摘要

我們以X光吸收光譜對鈦鎳摻雜銅合金Ti50Ni50-xCux (x=5，7.5，10，15，20，25，30)進行研究。從Ti L2，3 -edge譜中，Ti 3d 未占據態的變化趨勢與銅含量小於15%(x<15)電阻率的趨勢相反跟電子熱導率趨勢一致。從Ni L2，3 -edge譜中，Ni 3d未占據態的變化趨勢與銅含量大於15%(x>15)電阻率的趨勢相反跟電子熱導率趨勢一致。
從Ni的K-edge 譜中，前置吸收峰在Ti50Ni50-xCux系列樣品(x=20、25、30)隨著x含量上升，3d-4p混成未佔據態有序下降。從Cu的K-edge譜中，前置吸收峰在Ti50Ni50-xCux系列樣品(x=20、25、30)隨著x含量上升，3d-4p混成未佔據態有序上升。可知Ti50Ni50-xCux系列樣品(x=20、25、30) 電子由Cu 3d-4p混成軌域向Ni 3d-4p混成軌域遷移。

關鍵字

X光吸收光譜 ； 形狀記憶合金

並列摘要

We have performed X-ray absorption near edge structure (XANES) to study the shape memory alloys Ti50Ni50-xCux (x=5，7.5，10，15，20，25，30). From Ti L2，3 -edge spectra, the variation of Ti 3d unoccupied states correlates well with electronic thermal conductivity but instead trends with the electric resistivity on the copper content less than 15%(x<15). From Ni L2，3 -edge spectra, the variation of Ni 3d unoccupied states correlates well with electronic thermal conductivity but instead trends with the electric resistivity on the copper content greater than 15%(x>15).
From Ni K -edge spectra, pre-absorption peak at Ti50Ni50-xCux (x=20、25、30) with the increase of x content, 3d-4p mixed with unordered state orderly decline. From Cu K -edge spectra, pre-absorption peak at Ti50Ni50-xCux (x=20、25、30) with the increase of x content, 3d-4p mixed with unordered state orderly rise. It can be seen that the Ti50Ni50-xCux (x=20、25、30) electrons are intermixed by the Cu 3d-4p into the orbital domain to Ni 3d-4p.

並列關鍵字

XANES ； Shape Memory Alloys

參考文獻

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