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  • 學位論文

X光吸收光譜對銻與硒摻雜鍗化鉍粉末之研究

X-ray absorption spectroscopy study of Sb and Se doped Bi2Te3 powders

指導教授 : 張經霖

摘要


本論文的工作是利用X光吸收光譜近邊緣結構研究一系列摻雜Sb及Se的Bi2Te3粉末,以探討其摻雜與熱電性質量測的關係。從熱電性質量測結果看到,在摻雜Sb的系列中,改變其摻雜濃度會出現不同型式的傳輸載子。經由X光吸收譜近邊緣結構中我們看到摻雜Sb系列的樣品在不同傳輸載子型式下的載子數量皆為增加,而在摻雜Se系列樣品中載子數量卻為減少。此外我們將吸收譜與電阻率量測的結果比對後,發現Sb摻雜使電阻率隨載子濃度的增加而增加,而Se摻雜使電阻率隨著載子濃度減少而增加,得到了不論在Bi-site或Te-Site上的摻雜都會使得載子移動率減少以致於電阻率增加的結果。

並列摘要


In order to study the correlation between doping effect and the thermoelectric property, we have performed x-ray absorption near-edge structure (XANES) study on a series of thermoelectric materials of Bi2-xSbxTe3(x=0,0.5, 1.0 and 1.5) and Bi2Te2.7Se0.3 powders. In the Sb-doped systems, according to the result of the thermopower measurement we found different types of carrier appeared when doping different concentration of Sb. The XANES spectra show that in both p-type and n-type samples, carriers are increased in Sb-doped systems, and decreased in Se-doped systems. After comparing the result of XANES and resistivity measurement, it shows that the resistivity is positively related to the concentration of the carriers when doping Sb; however, the resistivity is negatively related to the concentration of the carriers when doping Se. As a result, any substitution in either Bi-site or Te-site will likely have negative effects on the carrier mobilities.

並列關鍵字

XANES Thermoelectric Materials Bi2Te3

參考文獻


1. Seebeck, T. J.Magnetic polarization of metals and minerals, Abhandlungen der Deutschen Akademie Wissenschaften zu Berlin, 265, 1822-1823.
2. G. S. Nolas, G. A. Slack, J. L. Cohn and S. B. Schujman, The next generation of thermoelectric materials, Proceedings of the 17th international conference on thermoelectrics, p294-297, 1998.
6. Bao-Ling Huang, and Massoud Kaviany, Phys. Rev. B 77, 125209 (2008).
7. M. H. Francombe, Br. J. Appl. Phys. 9, 415 (1958).
9. J. R. Wiese, and L. Muldawer, J. Phys. Chem. Solids 15, 13 (1960).

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