氧化鋅與摻鎵氧化鋅奈米柱之無催化劑合成與特性研究

Catalyst-Free Synthesis and Characterization of Aligned ZnO and ZnO:Ga nanorods

陳家銘(Chia-Ming Chen)

指導教授 ： 洪魏寬

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2012年)

摘要

在本論文中，以氧化鋅薄膜作為緩衝層（buffer layer），成功藉由氣相傳輸法，以無催化劑的方式將單晶的氧化鋅奈米柱成長於c-plane 藍寶石基板上，並且利用掃描式電子顯微鏡（scanning electron microscope, SEM）觀察其表面結構，發現改變其成長時間對於長度有所影響，由X-ray繞射觀察奈米柱成長方向為（002），光激螢光光譜（Photoluminescence Spectrum, PL）的強度與結晶品質良好。
接下來使用氧化鎵加入摻雜反應，其他的製程參數皆與製作純氧化鋅奈米柱時一樣，由於氧化鎵的摻雜，從SEM可觀察到奈米柱的長度明顯減少，經由PL與X-ray繞射分析，以及高解析穿透式電子顯微鏡做後續的量測觀察，其摻雜過後的結晶性品質變差，得知其在有限的有效摻雜量，氧化鎵對氧化鋅奈米柱特性的影響相當敏銳。

關鍵字

奈米柱 ； 氧化鋅 ； 氧化鎵 ； 摻雜

並列摘要

In this thesis, by using ZnO as buffer layer successfully via catalyst-free vapor transport, single crystal ZnO grows on c-plane sapphire board. We can detect growing time relative to its length under SEM when observing its surface. PL strength and crystal quality is good under the observation of X-ray diffraction of growth direction of nanorods.
Then using Ga2O3 as doping reaction, other setting numbers are the same as making the ZnO nanorods. Because the doping of Ga2O3, obvious shortening of the length of nanorods is observed under SEM. Analyzing under PL and X-ray diffraction and HRTEM, the quality of crystal is worse under limited effective doping numbers. Ga2O3 is sensitively influential to the quality of ZnO nanorods.

並列關鍵字

nanorods ； ZnO ； Ga2O3 ； doping

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