- 學位論文
以噴霧熱解法於藍寶石基板上沉積摻銻氧化鋅薄膜
The Spray-Pyrolysis Deposition of Sb-doped ZnO Thin Films on Sapphire
摘要
本論文使用架設簡單、製程快速及成本低廉的超音波噴霧熱解法，在藍寶石基板上製作出摻銻之氧化鋅（SZO）薄膜，利用X光繞射儀（XRD）觀察晶體結構，以掃描式電子顯微鏡（SEM）觀察表面形貌，以霍爾（Hall）量測儀探究其電學特性。 從XRD分析得知，氧化鋅薄膜在（002）方向具有良好的結晶性，隨著摻雜濃度比例的增加，（002）方向繞射峰值會向低角度位移，說明摻雜物是以取代的方式進入氧化鋅。然而再利用霍爾量測分析電性，發現在沉積溫度600°C，摻雜濃度為1.5at％時，SZO薄膜形成特性最佳之P型半導體，具有最低電阻率0.003187Ω-cm，最高之載子濃度7.7×1019cm-3與遷移率25.42466cm2/Vs。因此，本實驗利用超音波噴霧熱解法製作摻銻之氧化鋅薄膜，可成功摻雜出具有良好電性的P型半導體薄膜。
並列摘要
In this study, we investigated the Sb-doping effects on ZnO films deposited on sapphire by ultrasonic spray technique. The structure properties of ZnO thin films were characterized by X-ray diffraction（XRD）. The surface morphology was characterized by scanning electron microscopy（SEM）. The electric properties were analyzed by Hall-effect measurement. Results of X-ray diffraction revealed that the SZO thin films had great crystallinity on the c-axis direction, and made the（002）peak shifted to lower angle value for higher doping ratio. The Hall-effect measurement showed that the best p-type sb-doped ZnO films were obtained when 1.5at% of antimony were doped at temperature of 600°C under these optimal deposition conditions, the film showed a low resistivity of 0.003Ω-cm, high hole concentration of 7.7×1019cm-3 and high mobility of 25.4cm2/Vs. In this study, the Sb-doped p-type ZnO thin films were successfully grown by ultrasonic spray pyrolysis with high carrier concentration, high mobility, and low resistivity.