超晶格結構p-i-n氮化鋁鎵光偵測器之研究

The Research of Supperlassice Structure AlGaN p-i-n Photodtetctor

顏祺晃(Chi-Huang Yen)

指導教授 ： 陳隆建

國立臺北科技大學/機電學院/光電工程系所/碩士(2005年)

https://doi.org/10.6841/NTUT.2005.00021

摘要

本論文為Al0.1Ga0.9N/GaN超晶格結構之Visible-blind AlGaN p-i-n光偵測二極體的究研和製造，以有機金屬氣相沉積技術(metal-organic vapor phase deposition, MOCVD)，在(0001)方向的sapphire基板上，成長各磊晶層，並成長了15對Al0.1Ga0.9N/GaN量子井結構以提高元件的特性。
本元件具有相當低的暗電流，在逆向偏壓5伏特時其暗電流為10-10安培，而光電流為10-5安培，其光電流對暗電流比值高達了5個級數。在逆偏壓3伏特及5伏特波長為340nm時，其光響應度分別為0.12A/W和0.2A/W，外部量子效率分別為0.438和0.729，在入射光波長300 nm至340 nm之間呈現極佳的光響應度。逆向偏壓為20伏特時，其內部增益為58。

關鍵字

AlGaN ； p-i-n

並列摘要

We will demonstrate report on the fabrication and characterization of visible-blind AlGaN p-i-n photodiode with an Al0.1Ga0.9N/GaN superlattice structure. The sample was grown by metal organic vapor-phase deposition on c-plane (0 0 0 1) sapphire substrate and 15 pairs of Al0.1Ga0.9N/GaN superlattice structure can echance the difference between ionization coefficient of electrons and holes further improves the performance.
Form experiment, we could achieve a lower dark current and a larger photocurrent to dark current contrast ratio which is higher than six orders of magnitude. The responsivities at 340 nm at biases of -3 V and -5 were 0.12 A/W and 0.2 A/W, and the ηwere 0.438 and 0.729, respectively. The gain at biases of -20 V were 58.

並列關鍵字

AlGaN ； p-i-n

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