利用傾斜旋轉沉積法製作螺旋狀氮化鋁層之特性研究

Exploitation helical AlN layer prepared by oblique rotation of deposition

羅意敏(Yi-Min Luo)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2011年)

摘要

氮化鋁（Aluminium Nitride，AlN）為直接能隙的半導體材料，具有高化學穩定性與高能隙(約6.2 eV)，AlN材料的晶格為a=3.112 Å和GaN材料的晶格為 a=3.189 Å材料，兩者材料之晶格不匹配約為2.4 %及具有良好的導熱特性，因此被視為目前最適合做為發光二極體的緩衝層材料。 藉由基板的週期旋轉，可雕塑出如分立的傾斜柱狀結構、Z字形(Chevron)或多彎折形(Zigzag)等柱狀為觀結構薄膜，可採用 tangent rule 及 cosine rule 兩種理論來預測濺鍍原子通量入射基板角度（α）與柱狀薄膜傾斜角度（β）之間的關係。 本研究以射頻反應式磁控濺鍍系統，利用傾斜旋轉沉積技術成長氮化鋁薄膜於藍寶石(Sapphire)基板上。以旋轉改變基板傾斜角方式，濺鍍不同角度之AlN薄膜，觀察其AlN奈米柱薄膜表面與橫截面並觀察斜向沉積角度對AlN奈米柱薄膜的結構和結晶性等特性的影響。X-ray量測其可觀察2θ值為37.7 °和41.33 °有強烈繞射信號，其分別是AlN(101)和藍寶石(0006)的繞射峰，在不同沉積角度對AlN膜層的x-ray繞射可發現隨著沉積角度的增加，(101)AlN的結晶性會變差。

關鍵字

氮化鋁 ； 傾斜旋轉沉積

並列摘要

AlN is the direct band gap semiconductor material with high chemical stability and high energy gap (about 6.2 eV). AlN and GaN material the lattice are a = 3.112 Å and a = 3.189 Å. Between the two materials the lattice mismatch is about 2.4 % and has good thermal properties is the most suitable on LED the buffer layer material.
By rotating the substrate periodically deposition, That oblique angle flux gives deposited films a porous tilted columnar, chevron and zigzag microstructure. That sputtering can use tangent and cosine rules to predict the relationship between the columnar inclination angle (β) and flux angle (α) in low background gas pressures.
This study, AlN nanorods structure film deposited with different oblique rotation by reactive radio-frequency magnetron sputtering system for substrate. The different angle of AlN by oblique-angle to tilt the angle of substrate, and the morphology structure was observed. X-ray can be observed which were AlN (101) and sapphire (006) of the diffraction peaks. At different deposition angle AlN films on the x- ray can be found with the deposition angle increases the (101) AlN crystaline will be worse.

並列關鍵字

Aluminium Nitride ； AlN ； Oblique Angle Oxide ； OAD

參考文獻

[1] Pendeoepitaxy of gallium nitride thin films Kevin Linthicum,Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis Appl. Phys. Lett. 75, 196 (1999)

[2] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening T. Fujii,Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars,and S. Nakamura Appl. Phys. Lett. 84, 855 (2004)

[3] Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface Chul Huh,Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park J. Appl. Phys. 93, 9383 (2003)

[10] S.M. Hubbard , D. Pavlidis, V. Valiaev , M.A. Stevens-Kalceff , I.M. Tiginyanu, “Electrical characterization and cathodoluminescence microanalysisof AlN/GaN heterostructures”, Materials Science and Engineering B91–92 ,pp336–340, 2002.

[12] E. Alckseev, A. Eiscnbach and D. Pavlidis, “Low interface state density AlN/GaN MISFETs”, ELECTRONICS LETTERS, Vol 35, NO. 24 20th November 1999.