在低溫環境下利用間接接合法將氮化銦及矽晶圓結合

Combined GaN with Silicon Wafer by Indirect Bonding at Low Temperature

張詩汎(Shih-Fan Chang)

指導教授 ： 陳隆建

國立臺北科技大學/機電學院/光電工程系所/碩士(2005年)

摘要

本論文主要是研究以間接接合法，以金屬作為界面，並改變不同的環境參數，例如:晶圓退火的溫度、接合的時間，來探討環境的變化對於晶圓接合的效果有何影響。實驗中所用的兩組晶圓分別為矽晶圓對，以及氮化鎵和矽晶片。先以電子槍在晶片上先蒸鍍鈦，厚度為1000 Å，再分次蒸鍍錫金、鋁和金，厚度為從5000~6000 Å不等，放入異丙醇中預接合，以達到隔絕空氣的效果，最後將預接合完成的晶圓組，以不?袗?的接合製具施予壓力，送入高溫爐中，以高溫及高壓得到晶圓接合的效果；使用掃瞄式電子顯微鏡對接合後的橫截面作觀察，由拍攝的影像發現以金作為接合層，在溫度450℃下退火60分鐘可以獲得良好的接合效果。

關鍵字

氮化鎵 ； 矽晶圓 ； 晶圓接合

並列摘要

The indirect bonding is investigated to bond wafers in various environment with metal interface. By altering parameters, such as annealing time and bonding time. It is found that the effect of wafer bonding varies in different conditions. Two wafer pairs, silicon pair and GaN-silicon pair respectively, are used as our samples. 1000 Å Ti is deposited on the pairs by E-gun evaporation which follows interface layer deposition. Sn-Au alloy, Al and Au with thickness of 5000~6000 Å are chosen for interfaces, the pair is put in IPA for prebonding to protect wafer from air. Then chip wafers with steel bonding appliance and send into the furnace. the wafer bonding is achieved by pressure and heating. The cross-section of bonded pairs is observed with SEM. From the images, it is found that Au is good interface layer for wafer bonding and great bonding effect could be obtained under 450℃ annealing for 60 minutes.

並列關鍵字

Gallium nitride ； Silicon wafer ； Wafer bonding

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